Luminescence dynamics in AlGaN with AlN content of 20

Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time‐resolved photoluminescence (TR‐PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low‐temperature...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2017-04, Vol.214 (4), p.1600481-n/a
Hauptverfasser:	Soltani, Sonia, Bouzidi, Mouhamed, Touré, Alhousseynou, Gerhard, Marina, Halidou, Ibrahim, Chine, Zied, El Jani, Belgacem, Shakfa, Mohammad Khaled
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN Aluminum gallium nitrides Aluminum nitride carrier localization Carriers Decay Defects disorder Dynamic tests Dynamics Emission Luminescence Optical properties Photoluminescence Position (location) Radiative recombination Spectral emissivity time‐resolved photoluminescence
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