Strong Adlayer–Substrate Interactions “Break” the Patching Growth of h‑BN onto Graphene on Re(0001)

Hetero-epitaxial growth of hexagonal boron nitride (h-BN) from the edges of graphene domains or vice versa has been widely observed during synthesis of in-plane heterostructures of h-BN-G on Rh(111), Ir(111), and even Cu foil. We report that on a strongly coupled Re(0001) substrate via a similar two...

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Veröffentlicht in:	ACS nano 2017-02, Vol.11 (2), p.1807-1815
Hauptverfasser:	Qi, Yue, Han, Nannan, Li, Yuanchang, Zhang, Zhepeng, Zhou, Xiebo, Deng, Bing, Li, Qiucheng, Liu, Mengxi, Zhao, Jijun, Liu, Zhongfan, Zhang, Yanfeng
Format:	Artikel
Sprache:	eng
Schlagworte:	Boron nitride Foils Graphene Heterostructures Nanostructure Nucleation Patching Synthesis
Online-Zugang:	Volltext
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