Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

The use of 2D materials to improve the capabilities of electronic devices is a promising strategy that has recently gained much interest in both academia and industry. However, while the research in 2D metallic and semiconducting materials is well established, detailed knowledge and applications of...

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Veröffentlicht in:Advanced functional materials 2017-03, Vol.27 (10), p.np-n/a
Hauptverfasser: Pan, Chengbin, Ji, Yanfeng, Xiao, Na, Hui, Fei, Tang, Kechao, Guo, Yuzheng, Xie, Xiaoming, Puglisi, Francesco M., Larcher, Luca, Miranda, Enrique, Jiang, Lanlan, Shi, Yuanyuan, Valov, Ilia, McIntyre, Paul C., Waser, Rainer, Lanza, Mario
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Sprache:eng
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