Influence of structure geometry on THz emission from Black Silicon surfaces fabricated by reactive ion etching

Influence of structure geometry on THz emission from Black Silicon surfaces fabricated by reactive ion etching

The influence of structure geometry on THz emission from Black Silicon (BS) surfaces fabricated by reactive ion etching (RIE) has been investigated by a comprehensive study including optical simulations, optical-pump THz probe and THz emission studies. A strong enhancement of THz emission is observe...

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Veröffentlicht in:Optics express 2017-03, Vol.25 (6), p.6604-6620
Hauptverfasser: Blumröder, Ulrike, Zilk, Matthias, Hempel, Hannes, Hoyer, Patrick, Pertsch, Thomas, Eichberger, Rainer, Unold, Thomas, Nolte, Stefan
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container_end_page 6620
container_issue 6
container_start_page 6604
container_title Optics express
container_volume 25
creator Blumröder, Ulrike
Zilk, Matthias
Hempel, Hannes
Hoyer, Patrick
Pertsch, Thomas
Eichberger, Rainer
Unold, Thomas
Nolte, Stefan
description The influence of structure geometry on THz emission from Black Silicon (BS) surfaces fabricated by reactive ion etching (RIE) has been investigated by a comprehensive study including optical simulations, optical-pump THz probe and THz emission studies. A strong enhancement of THz emission is observed with increasing structure depth, which is mainly related to the increased number of carriers created within the silicon needles and not due to the overall absorption enhancement as previously claimed for silicon nanowires.
doi_str_mv 10.1364/OE.25.006604
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title Influence of structure geometry on THz emission from Black Silicon surfaces fabricated by reactive ion etching
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