Modeling anisotropic magnetoresistance in layered antiferromagnets

We have investigated the electronic transport and the anisotropic magnetoresistance in systems consisting of pairs of antiferromagnetically aligned layers separated by a non-magnetic layer, across which an antiferromagnetic coupling between the double layers is established. Calculations have been pe...

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Veröffentlicht in:Journal of physics. Condensed matter 2017-06, Vol.29 (23), p.235302-235302
Hauptverfasser: Santos, D L R, Pinheiro, F A, Velev, J, Chshiev, M, d'Albuquerque e Castro, J, Lacroix, C
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container_end_page 235302
container_issue 23
container_start_page 235302
container_title Journal of physics. Condensed matter
container_volume 29
creator Santos, D L R
Pinheiro, F A
Velev, J
Chshiev, M
d'Albuquerque e Castro, J
Lacroix, C
description We have investigated the electronic transport and the anisotropic magnetoresistance in systems consisting of pairs of antiferromagnetically aligned layers separated by a non-magnetic layer, across which an antiferromagnetic coupling between the double layers is established. Calculations have been performed within the framework of the tight-binding model, taking into account the exchange coupling within the ferromagnetic layers and the Rashba spin-orbit interaction. Conductivities have been evaluated in the ballistic regime, based on Kubo formula. We have systematically studied the dependence of the conductivity and of the anisotropic magnetoresistance on several material and structural parameters, such as the orientation of the magnetic moments relative to the crystalline axis, band filling, out-of-plane hopping and spin-orbit parameter.
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subjects anisotropic magnetoresistance
Condensed Matter
layered antiferromagnetic systems
Mesoscopic Systems and Quantum Hall Effect
nanostructured systems
Physics
title Modeling anisotropic magnetoresistance in layered antiferromagnets
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