Cu-based quaternary chalcogenide Cu2BaSnS4 thin films acting as hole transport layers in inverted perovskite CH3NH3PbI3 solar cells

Efforts toward developing efficient and stable inorganic hole transport materials for inverted perovskite CH3NH3PbI3 solar cells are underway. Herein, a wide bandgap p-type quaternary chalcogenide Cu2BaSnS4 semiconductor is demonstrated as a promising hole transport material in inverted perovskite C...

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Veröffentlicht in:	Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2017-02, Vol.5 (6), p.2920-2928
Hauptverfasser:	Ge, Jie, Grice, Corey R, Yan, Yanfa
Format:	Artikel
Sprache:	eng
Schlagworte:	Chalcogenides Hysteresis Perovskites Photovoltaic cells Semiconductors Solar cells Thin films Transport
Online-Zugang:	Volltext
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