Control of Multilevel Resistance in Vanadium Dioxide by Electric Field Using Hybrid Dielectrics

We investigate the effect of electric field on VO2 back-gated field effect transistor (FET) devices. Using hybrid dielectric layers, we demonstrate the highest resistance modulation on the order of 102 in VO2 at a positive gate bias of 80 V (1.6 MV/cm). VO2 FET devices are prepared on SiO2 substrate...

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Veröffentlicht in:	ACS applied materials & interfaces 2017-04, Vol.9 (15), p.13571-13576
Hauptverfasser:	Abbas, Kaleem, Hwang, Jaeseok, Bae, Garam, Choi, Hongsoo, Kang, Dae Joon
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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