Emergence of topological bands on the surface of ZrSnTe crystal
By using angle-resolved photoemission spectroscopy combined with first-principles calculations, we reveal that the topmost unit cell of ZrSnTe crystal hosts two-dimensional (2D) electronic bands of the topological insulator (TI) state, although such a TI state is defined with a curved Fermi level in...
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Veröffentlicht in: | Physical review. B 2016-06, Vol.93 (24), Article 241104 |
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container_title | Physical review. B |
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creator | Lou, R. Ma, J.-Z. Xu, Q.-N. Fu, B.-B. Kong, L.-Y. Shi, Y.-G. Richard, P. Weng, H.-M. Fang, Z. Sun, S.-S. Wang, Q. Lei, H.-C. Qian, T. Ding, H. Wang, S.-C. |
description | By using angle-resolved photoemission spectroscopy combined with first-principles calculations, we reveal that the topmost unit cell of ZrSnTe crystal hosts two-dimensional (2D) electronic bands of the topological insulator (TI) state, although such a TI state is defined with a curved Fermi level instead of a global band gap. Furthermore, we find that by modifying the dangling bonds on the surface through hydrogenation, this 2D band structure can be manipulated so that the expected global energy gap is most likely to be realized. This facilitates the practical applications of 2D TI in heterostructural devices and those with surface decoration and coverage. Since ZrSnTe belongs to a large family of compounds having the similar crystal and band structures, our findings shed light on identifying more 2D TI candidates and superconductor-TI heterojunctions supporting topological superconductors. |
doi_str_mv | 10.1103/PhysRevB.93.241104 |
format | Article |
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Furthermore, we find that by modifying the dangling bonds on the surface through hydrogenation, this 2D band structure can be manipulated so that the expected global energy gap is most likely to be realized. This facilitates the practical applications of 2D TI in heterostructural devices and those with surface decoration and coverage. Since ZrSnTe belongs to a large family of compounds having the similar crystal and band structures, our findings shed light on identifying more 2D TI candidates and superconductor-TI heterojunctions supporting topological superconductors.</description><identifier>ISSN: 2469-9950</identifier><identifier>EISSN: 2469-9969</identifier><identifier>DOI: 10.1103/PhysRevB.93.241104</identifier><language>eng</language><subject>Band spectra ; Band structure of solids ; Condensed matter ; Crystals ; Electronics ; Emergence ; Superconductors ; Topology</subject><ispartof>Physical review. 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Since ZrSnTe belongs to a large family of compounds having the similar crystal and band structures, our findings shed light on identifying more 2D TI candidates and superconductor-TI heterojunctions supporting topological superconductors.</description><subject>Band spectra</subject><subject>Band structure of solids</subject><subject>Condensed matter</subject><subject>Crystals</subject><subject>Electronics</subject><subject>Emergence</subject><subject>Superconductors</subject><subject>Topology</subject><issn>2469-9950</issn><issn>2469-9969</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNo9kMFKAzEURYMoWGp_wFWWbqa-5CWZyUq01CoUFK0bNyFNMm1lOqnJVOjfWxkVHtzH5XAXh5BLBmPGAK-f14f8Er7uxhrHXBwrcUIGXChdaK306f8v4ZyMcv4AAKZAl6AH5Ga6DWkVWhdorGkXd7GJq42zDV3a1mcaW9qtA837VNueeU-v7SJQlw65s80FOattk8PoN4fk7X66mDwU86fZ4-R2XjgUqis4SA9BeO1L8PXxpGYCBarSegnKaUSP4L10mkmuKi6XQiBbVljVJTrAIbnqd3cpfu5D7sx2k11oGtuGuM-GVRUAL5HjEeU96lLMOYXa7NJma9PBMDA_wsyfMKPR9MLwGw3mXls</recordid><startdate>20160615</startdate><enddate>20160615</enddate><creator>Lou, R.</creator><creator>Ma, J.-Z.</creator><creator>Xu, Q.-N.</creator><creator>Fu, B.-B.</creator><creator>Kong, L.-Y.</creator><creator>Shi, Y.-G.</creator><creator>Richard, P.</creator><creator>Weng, H.-M.</creator><creator>Fang, Z.</creator><creator>Sun, S.-S.</creator><creator>Wang, Q.</creator><creator>Lei, H.-C.</creator><creator>Qian, T.</creator><creator>Ding, H.</creator><creator>Wang, S.-C.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20160615</creationdate><title>Emergence of topological bands on the surface of ZrSnTe crystal</title><author>Lou, R. ; Ma, J.-Z. ; Xu, Q.-N. ; Fu, B.-B. ; Kong, L.-Y. ; Shi, Y.-G. ; Richard, P. ; Weng, H.-M. ; Fang, Z. ; Sun, S.-S. ; Wang, Q. ; Lei, H.-C. ; Qian, T. ; Ding, H. ; Wang, S.-C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c346t-205d0e4d9d70df0df591434367ad506c933d30dd5c91526825b4431b838f73c03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Band spectra</topic><topic>Band structure of solids</topic><topic>Condensed matter</topic><topic>Crystals</topic><topic>Electronics</topic><topic>Emergence</topic><topic>Superconductors</topic><topic>Topology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lou, R.</creatorcontrib><creatorcontrib>Ma, J.-Z.</creatorcontrib><creatorcontrib>Xu, Q.-N.</creatorcontrib><creatorcontrib>Fu, B.-B.</creatorcontrib><creatorcontrib>Kong, L.-Y.</creatorcontrib><creatorcontrib>Shi, Y.-G.</creatorcontrib><creatorcontrib>Richard, P.</creatorcontrib><creatorcontrib>Weng, H.-M.</creatorcontrib><creatorcontrib>Fang, Z.</creatorcontrib><creatorcontrib>Sun, S.-S.</creatorcontrib><creatorcontrib>Wang, Q.</creatorcontrib><creatorcontrib>Lei, H.-C.</creatorcontrib><creatorcontrib>Qian, T.</creatorcontrib><creatorcontrib>Ding, H.</creatorcontrib><creatorcontrib>Wang, S.-C.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physical review. B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lou, R.</au><au>Ma, J.-Z.</au><au>Xu, Q.-N.</au><au>Fu, B.-B.</au><au>Kong, L.-Y.</au><au>Shi, Y.-G.</au><au>Richard, P.</au><au>Weng, H.-M.</au><au>Fang, Z.</au><au>Sun, S.-S.</au><au>Wang, Q.</au><au>Lei, H.-C.</au><au>Qian, T.</au><au>Ding, H.</au><au>Wang, S.-C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Emergence of topological bands on the surface of ZrSnTe crystal</atitle><jtitle>Physical review. B</jtitle><date>2016-06-15</date><risdate>2016</risdate><volume>93</volume><issue>24</issue><artnum>241104</artnum><issn>2469-9950</issn><eissn>2469-9969</eissn><abstract>By using angle-resolved photoemission spectroscopy combined with first-principles calculations, we reveal that the topmost unit cell of ZrSnTe crystal hosts two-dimensional (2D) electronic bands of the topological insulator (TI) state, although such a TI state is defined with a curved Fermi level instead of a global band gap. Furthermore, we find that by modifying the dangling bonds on the surface through hydrogenation, this 2D band structure can be manipulated so that the expected global energy gap is most likely to be realized. This facilitates the practical applications of 2D TI in heterostructural devices and those with surface decoration and coverage. Since ZrSnTe belongs to a large family of compounds having the similar crystal and band structures, our findings shed light on identifying more 2D TI candidates and superconductor-TI heterojunctions supporting topological superconductors.</abstract><doi>10.1103/PhysRevB.93.241104</doi></addata></record> |
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subjects | Band spectra Band structure of solids Condensed matter Crystals Electronics Emergence Superconductors Topology |
title | Emergence of topological bands on the surface of ZrSnTe crystal |
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