Self-organization of polarization-dependent periodic nanostructures embedded in III–V semiconductor materials

Space-selective nanostructuring inside various III–V semiconductor materials containing gallium element has been accomplished by focused irradiation of IR femtosecond laser pulses. To elucidate the formation mechanisms of periodic nanostructures, we systematically classified III–V semiconductor mate...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2016-03, Vol.122 (3), p.1-7, Article 159
Hauptverfasser:	Shimotsuma, Y., Sei, T., Mori, M., Sakakura, M., Miura, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Condensed Matter Physics Energy gaps (solid state) Femtosecond Formations Gallium Group III-V semiconductors Lasers Machines Manufacturing Nanostructure Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Processes Semiconductors Surfaces and Interfaces Thin Films
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!