Regimes of radial growth for Ga-catalyzed GaAs nanowires
We present a non-stationary growth model of Ga-catalyzed GaAs nanowires which is based on the two kinetic equations for the nanowire elongation rate and a time-dependent base radius of the droplet. We show that self-catalyzed nanowire growth is principally different from the Au-catalyzed one because...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2016-07, Vol.122 (7), p.1-7, Article 671 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | Dubrovskii, V. G. Berdnikov, Y. Sibirev, N. V. |
| description | We present a non-stationary growth model of Ga-catalyzed GaAs nanowires which is based on the two kinetic equations for the nanowire elongation rate and a time-dependent base radius of the droplet. We show that self-catalyzed nanowire growth is principally different from the Au-catalyzed one because a stationary droplet size cannot be maintained at all times. Close examination of the model enables us to separate different regimes of radial growth in which the droplet shrinks, inflates or converges to a certain stationary size as nanowires grow, depending on the initial droplet radius and the growth conditions. We also discuss some experimental data on the growth modes of Ga-catalyzed GaAs nanowires from the viewpoint of the obtained results. |
| doi_str_mv | 10.1007/s00339-016-0179-4 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1880024618</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1880024618</sourcerecordid><originalsourceid>FETCH-LOGICAL-c321t-1413071da333fbf38e796fe4e9b926a8d544dc4ec649c274cc2f4692902135863</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWKs_wNsevUQnH80mx1K0CoIgeg5pdlK3bDc12VLqrzdlPTswDAPPOzAPIbcM7hlA_ZABhDAUmCpdGyrPyIRJwSkoAedkAkbWVAujLslVzhsoJTmfEP2O63aLuYqhSq5pXVetUzwMX1WIqVo66t3guuMPNmWZ56p3fTy0CfM1uQiuy3jzN6fk8-nxY_FMX9-WL4v5K_WCs4EyyQTUrHFCiLAKQmNtVECJZmW4crqZSdl4iV5J43ktvedBKsMNcCZmWokpuRvv7lL83mMe7LbNHrvO9Rj32TKtAbhUTBeUjahPMeeEwe5Su3XpaBnYkyU7WrLFkj1ZsrJk-JjJhe3XmOwm7lNfPvon9AvqFWgg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1880024618</pqid></control><display><type>article</type><title>Regimes of radial growth for Ga-catalyzed GaAs nanowires</title><source>SpringerLink Journals - AutoHoldings</source><creator>Dubrovskii, V. G. ; Berdnikov, Y. ; Sibirev, N. V.</creator><creatorcontrib>Dubrovskii, V. G. ; Berdnikov, Y. ; Sibirev, N. V.</creatorcontrib><description>We present a non-stationary growth model of Ga-catalyzed GaAs nanowires which is based on the two kinetic equations for the nanowire elongation rate and a time-dependent base radius of the droplet. We show that self-catalyzed nanowire growth is principally different from the Au-catalyzed one because a stationary droplet size cannot be maintained at all times. Close examination of the model enables us to separate different regimes of radial growth in which the droplet shrinks, inflates or converges to a certain stationary size as nanowires grow, depending on the initial droplet radius and the growth conditions. We also discuss some experimental data on the growth modes of Ga-catalyzed GaAs nanowires from the viewpoint of the obtained results.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-016-0179-4</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Characterization and Evaluation of Materials ; Condensed Matter Physics ; Droplets ; Elongation ; Gallium arsenide ; Kinetic equations ; Machines ; Manufacturing ; Materials science ; Nanotechnology ; Nanowires ; Optical and Electronic Materials ; Physics ; Physics and Astronomy ; Processes ; Smart Materials and Structures ; Surfaces and Interfaces ; Thin Films ; Time dependence</subject><ispartof>Applied physics. A, Materials science & processing, 2016-07, Vol.122 (7), p.1-7, Article 671</ispartof><rights>Springer-Verlag Berlin Heidelberg 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c321t-1413071da333fbf38e796fe4e9b926a8d544dc4ec649c274cc2f4692902135863</citedby><cites>FETCH-LOGICAL-c321t-1413071da333fbf38e796fe4e9b926a8d544dc4ec649c274cc2f4692902135863</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-016-0179-4$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-016-0179-4$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Dubrovskii, V. G.</creatorcontrib><creatorcontrib>Berdnikov, Y.</creatorcontrib><creatorcontrib>Sibirev, N. V.</creatorcontrib><title>Regimes of radial growth for Ga-catalyzed GaAs nanowires</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>We present a non-stationary growth model of Ga-catalyzed GaAs nanowires which is based on the two kinetic equations for the nanowire elongation rate and a time-dependent base radius of the droplet. We show that self-catalyzed nanowire growth is principally different from the Au-catalyzed one because a stationary droplet size cannot be maintained at all times. Close examination of the model enables us to separate different regimes of radial growth in which the droplet shrinks, inflates or converges to a certain stationary size as nanowires grow, depending on the initial droplet radius and the growth conditions. We also discuss some experimental data on the growth modes of Ga-catalyzed GaAs nanowires from the viewpoint of the obtained results.</description><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Droplets</subject><subject>Elongation</subject><subject>Gallium arsenide</subject><subject>Kinetic equations</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Nanotechnology</subject><subject>Nanowires</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Smart Materials and Structures</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><subject>Time dependence</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKs_wNsevUQnH80mx1K0CoIgeg5pdlK3bDc12VLqrzdlPTswDAPPOzAPIbcM7hlA_ZABhDAUmCpdGyrPyIRJwSkoAedkAkbWVAujLslVzhsoJTmfEP2O63aLuYqhSq5pXVetUzwMX1WIqVo66t3guuMPNmWZ56p3fTy0CfM1uQiuy3jzN6fk8-nxY_FMX9-WL4v5K_WCs4EyyQTUrHFCiLAKQmNtVECJZmW4crqZSdl4iV5J43ktvedBKsMNcCZmWokpuRvv7lL83mMe7LbNHrvO9Rj32TKtAbhUTBeUjahPMeeEwe5Su3XpaBnYkyU7WrLFkj1ZsrJk-JjJhe3XmOwm7lNfPvon9AvqFWgg</recordid><startdate>20160701</startdate><enddate>20160701</enddate><creator>Dubrovskii, V. G.</creator><creator>Berdnikov, Y.</creator><creator>Sibirev, N. V.</creator><general>Springer Berlin Heidelberg</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20160701</creationdate><title>Regimes of radial growth for Ga-catalyzed GaAs nanowires</title><author>Dubrovskii, V. G. ; Berdnikov, Y. ; Sibirev, N. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c321t-1413071da333fbf38e796fe4e9b926a8d544dc4ec649c274cc2f4692902135863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Droplets</topic><topic>Elongation</topic><topic>Gallium arsenide</topic><topic>Kinetic equations</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Nanotechnology</topic><topic>Nanowires</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Smart Materials and Structures</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><topic>Time dependence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dubrovskii, V. G.</creatorcontrib><creatorcontrib>Berdnikov, Y.</creatorcontrib><creatorcontrib>Sibirev, N. V.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dubrovskii, V. G.</au><au>Berdnikov, Y.</au><au>Sibirev, N. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Regimes of radial growth for Ga-catalyzed GaAs nanowires</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2016-07-01</date><risdate>2016</risdate><volume>122</volume><issue>7</issue><spage>1</spage><epage>7</epage><pages>1-7</pages><artnum>671</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>We present a non-stationary growth model of Ga-catalyzed GaAs nanowires which is based on the two kinetic equations for the nanowire elongation rate and a time-dependent base radius of the droplet. We show that self-catalyzed nanowire growth is principally different from the Au-catalyzed one because a stationary droplet size cannot be maintained at all times. Close examination of the model enables us to separate different regimes of radial growth in which the droplet shrinks, inflates or converges to a certain stationary size as nanowires grow, depending on the initial droplet radius and the growth conditions. We also discuss some experimental data on the growth modes of Ga-catalyzed GaAs nanowires from the viewpoint of the obtained results.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-016-0179-4</doi><tpages>7</tpages></addata></record> |
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| subjects | Characterization and Evaluation of Materials Condensed Matter Physics Droplets Elongation Gallium arsenide Kinetic equations Machines Manufacturing Materials science Nanotechnology Nanowires Optical and Electronic Materials Physics Physics and Astronomy Processes Smart Materials and Structures Surfaces and Interfaces Thin Films Time dependence |
| title | Regimes of radial growth for Ga-catalyzed GaAs nanowires |
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