Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method
The electrical and photoresponse properties of Au/nanostructure AZO/p-Si/Al diode were investigated. Al-doped ZnO (AZO) thin films were deposited via pulsed laser deposition method on silicon substrate. Structural properties of the films were performed by using transmission electron microscopy and X...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2016-04, Vol.122 (4), p.1-7, Article 297 |
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| creator | Alyamani, A. Tataroğlu, A. El Mir, L. Al-Ghamdi, Ahmed A. Dahman, H. Farooq, W. A. Yakuphanoğlu, F. |
| description | The electrical and photoresponse properties of Au/nanostructure AZO/p-Si/Al diode were investigated. Al-doped ZnO (AZO) thin films were deposited via pulsed laser deposition method on silicon substrate. Structural properties of the films were performed by using transmission electron microscopy and X-ray powder diffraction (XRD). The XRD patterns showed that the AZO films are polycrystalline with hexagonal wurtzite structure preferentially oriented in (002) direction. Electrical and photoresponse properties of the diode were analyzed under in a wide range of frequencies and illumination intensities. It is observed that the reverse current of the diode increases with increasing illumination intensity. This result confirms that the diode exhibits both photoconducting and photovoltaic behavior. Also, the transient photocurrent, photocapacitance and photoconductance measured as a function of time highly depend on transient illumination. In addition, the frequency dependence of capacitance and conductance is attributed to the presence of interface states. |
| doi_str_mv | 10.1007/s00339-016-9812-5 |
| format | Article |
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Also, the transient photocurrent, photocapacitance and photoconductance measured as a function of time highly depend on transient illumination. In addition, the frequency dependence of capacitance and conductance is attributed to the presence of interface states.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-016-9812-5</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Azo ; Capacitance ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Diodes ; Illumination ; Machines ; Manufacturing ; Nanostructure ; Nanotechnology ; Optical and Electronic Materials ; Physics ; Physics and Astronomy ; Processes ; Pulsed laser deposition ; Surfaces and Interfaces ; Thin Films ; Wurtzite ; X-ray diffraction</subject><ispartof>Applied physics. 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A.</creatorcontrib><creatorcontrib>Yakuphanoğlu, F.</creatorcontrib><title>Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>The electrical and photoresponse properties of Au/nanostructure AZO/p-Si/Al diode were investigated. Al-doped ZnO (AZO) thin films were deposited via pulsed laser deposition method on silicon substrate. Structural properties of the films were performed by using transmission electron microscopy and X-ray powder diffraction (XRD). The XRD patterns showed that the AZO films are polycrystalline with hexagonal wurtzite structure preferentially oriented in (002) direction. Electrical and photoresponse properties of the diode were analyzed under in a wide range of frequencies and illumination intensities. It is observed that the reverse current of the diode increases with increasing illumination intensity. This result confirms that the diode exhibits both photoconducting and photovoltaic behavior. Also, the transient photocurrent, photocapacitance and photoconductance measured as a function of time highly depend on transient illumination. In addition, the frequency dependence of capacitance and conductance is attributed to the presence of interface states.</description><subject>Azo</subject><subject>Capacitance</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Diodes</subject><subject>Illumination</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Nanostructure</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Pulsed laser deposition</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><subject>Wurtzite</subject><subject>X-ray diffraction</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9kD1rHDEQhkVIIBc7PyCdSrtQbvSxu7ry8EdsOLDBSZNGaKXZnMzeSpZ2CW7zy6PjXHuaGd55n4F5CfnG4TsH6NYFQMoNA96yjeaCNR_IiispGLQSPpIVbFTHtNy0n8mXUp6hlhJiRf497uMcM5YUp4LUTp6mo-Jssi7UDU05JsxzwELjQLfLevv7YZ3YU1hvR-pD9Ej_hnlPq0yHMB4qgMlm9LR_pWkZS51GWzBTjymWMIc40YvH3fUlPeC8j_6cfBpstX1962fk1-3Nz6s7tnv4cX-13TEnBZ8ZQq-x76VowLd95wawavC6184hOmxB-052sue2UbpXCmTjQXHw4EWDEuUZuTjdrR-9LFhmcwjF4TjaCeNSDNcaQKiGt9XKT1aXYykZB5NyONj8ajiYY97mlLepeZtj3qapjDgxpXqnP5jNc1zyVD96B_oPwMiEIg</recordid><startdate>20160401</startdate><enddate>20160401</enddate><creator>Alyamani, A.</creator><creator>Tataroğlu, A.</creator><creator>El Mir, L.</creator><creator>Al-Ghamdi, Ahmed A.</creator><creator>Dahman, H.</creator><creator>Farooq, W. 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A.</au><au>Yakuphanoğlu, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2016-04-01</date><risdate>2016</risdate><volume>122</volume><issue>4</issue><spage>1</spage><epage>7</epage><pages>1-7</pages><artnum>297</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>The electrical and photoresponse properties of Au/nanostructure AZO/p-Si/Al diode were investigated. Al-doped ZnO (AZO) thin films were deposited via pulsed laser deposition method on silicon substrate. Structural properties of the films were performed by using transmission electron microscopy and X-ray powder diffraction (XRD). The XRD patterns showed that the AZO films are polycrystalline with hexagonal wurtzite structure preferentially oriented in (002) direction. Electrical and photoresponse properties of the diode were analyzed under in a wide range of frequencies and illumination intensities. It is observed that the reverse current of the diode increases with increasing illumination intensity. This result confirms that the diode exhibits both photoconducting and photovoltaic behavior. Also, the transient photocurrent, photocapacitance and photoconductance measured as a function of time highly depend on transient illumination. In addition, the frequency dependence of capacitance and conductance is attributed to the presence of interface states.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-016-9812-5</doi><tpages>7</tpages></addata></record> |
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| subjects | Azo Capacitance Characterization and Evaluation of Materials Condensed Matter Physics Diodes Illumination Machines Manufacturing Nanostructure Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Processes Pulsed laser deposition Surfaces and Interfaces Thin Films Wurtzite X-ray diffraction |
| title | Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method |
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