Incorporation of black phosphorus into P3HT:PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances
The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2016-11, Vol.122 (11), p.1-5, Article 974 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | Lin, Yow-Jon Lin, Hong-Zhi Yan, Nian-Hao Tang, Zhi-Hui Chang, Hsing-Cheng |
| description | The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection. |
| doi_str_mv | 10.1007/s00339-016-0490-0 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1880012459</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1880012459</sourcerecordid><originalsourceid>FETCH-LOGICAL-c349t-402826087cdc9300007886990ec7b32f25b644a20beb5b27e55c03aa55ade1543</originalsourceid><addsrcrecordid>eNp1kd1qFTEUhYMoeKw-gHcBb7yJ3fmZn3inh9oWKhas1yGTs6emziRjkin0EXxrczpeiGAghB2-tVibRchrDu84QHeaAaTUDHjLQGlg8ITsuJKCQSvhKdmBVh3rpW6fkxc530E9Sogd-XUZXExLTLb4GGgc6TBZ94Mu32OuN62Z-lAivZYXN--v9x8_nwZWHhakXz094L13mGnCvE7Fh9uKUj8vKd7jjKEcR5zQleSdnagNBxqXErevGLyjC6YxptmGavOSPBvtlPHVn_eEfPt0drO_YFdfzi_3H66Yk0oXpkD0ooW-cwen5XGPru9brQFdN0gximZolbICBhyaQXTYNA6ktU1jD8gbJU_I28235vy5Yi5m9tnhNNmAcc2G9z0AF6rRFX3zD3oX1xRqukeqV0JrWSm-US7FnBOOZkl-tunBcDDHcsxWjqnlmGM5BqpGbJpc2XCL6S_n_4p-A6S-kqs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1880842993</pqid></control><display><type>article</type><title>Incorporation of black phosphorus into P3HT:PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances</title><source>Springer Nature - Complete Springer Journals</source><creator>Lin, Yow-Jon ; Lin, Hong-Zhi ; Yan, Nian-Hao ; Tang, Zhi-Hui ; Chang, Hsing-Cheng</creator><creatorcontrib>Lin, Yow-Jon ; Lin, Hong-Zhi ; Yan, Nian-Hao ; Tang, Zhi-Hui ; Chang, Hsing-Cheng</creatorcontrib><description>The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-016-0490-0</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Applied physics ; Butyric acid ; Characterization and Evaluation of Materials ; Collection ; Condensed Matter Physics ; Current voltage characteristics ; Devices ; Electrical conduction ; Electrical resistivity ; Emissions control ; Energy conversion efficiency ; Esters ; Incorporation ; Machines ; Manufacturing ; Materials science ; Nanotechnology ; Optical and Electronic Materials ; Optoelectronic devices ; Phosphorus ; Physics ; Physics and Astronomy ; Processes ; Surface roughness ; Surfaces and Interfaces ; Thermionic emission ; Thin Films</subject><ispartof>Applied physics. A, Materials science & processing, 2016-11, Vol.122 (11), p.1-5, Article 974</ispartof><rights>Springer-Verlag Berlin Heidelberg 2016</rights><rights>Copyright Springer Science & Business Media 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-402826087cdc9300007886990ec7b32f25b644a20beb5b27e55c03aa55ade1543</citedby><cites>FETCH-LOGICAL-c349t-402826087cdc9300007886990ec7b32f25b644a20beb5b27e55c03aa55ade1543</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-016-0490-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-016-0490-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Lin, Yow-Jon</creatorcontrib><creatorcontrib>Lin, Hong-Zhi</creatorcontrib><creatorcontrib>Yan, Nian-Hao</creatorcontrib><creatorcontrib>Tang, Zhi-Hui</creatorcontrib><creatorcontrib>Chang, Hsing-Cheng</creatorcontrib><title>Incorporation of black phosphorus into P3HT:PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection.</description><subject>Applied physics</subject><subject>Butyric acid</subject><subject>Characterization and Evaluation of Materials</subject><subject>Collection</subject><subject>Condensed Matter Physics</subject><subject>Current voltage characteristics</subject><subject>Devices</subject><subject>Electrical conduction</subject><subject>Electrical resistivity</subject><subject>Emissions control</subject><subject>Energy conversion efficiency</subject><subject>Esters</subject><subject>Incorporation</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Optoelectronic devices</subject><subject>Phosphorus</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Surface roughness</subject><subject>Surfaces and Interfaces</subject><subject>Thermionic emission</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp1kd1qFTEUhYMoeKw-gHcBb7yJ3fmZn3inh9oWKhas1yGTs6emziRjkin0EXxrczpeiGAghB2-tVibRchrDu84QHeaAaTUDHjLQGlg8ITsuJKCQSvhKdmBVh3rpW6fkxc530E9Sogd-XUZXExLTLb4GGgc6TBZ94Mu32OuN62Z-lAivZYXN--v9x8_nwZWHhakXz094L13mGnCvE7Fh9uKUj8vKd7jjKEcR5zQleSdnagNBxqXErevGLyjC6YxptmGavOSPBvtlPHVn_eEfPt0drO_YFdfzi_3H66Yk0oXpkD0ooW-cwen5XGPru9brQFdN0gximZolbICBhyaQXTYNA6ktU1jD8gbJU_I28235vy5Yi5m9tnhNNmAcc2G9z0AF6rRFX3zD3oX1xRqukeqV0JrWSm-US7FnBOOZkl-tunBcDDHcsxWjqnlmGM5BqpGbJpc2XCL6S_n_4p-A6S-kqs</recordid><startdate>20161101</startdate><enddate>20161101</enddate><creator>Lin, Yow-Jon</creator><creator>Lin, Hong-Zhi</creator><creator>Yan, Nian-Hao</creator><creator>Tang, Zhi-Hui</creator><creator>Chang, Hsing-Cheng</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20161101</creationdate><title>Incorporation of black phosphorus into P3HT:PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances</title><author>Lin, Yow-Jon ; Lin, Hong-Zhi ; Yan, Nian-Hao ; Tang, Zhi-Hui ; Chang, Hsing-Cheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-402826087cdc9300007886990ec7b32f25b644a20beb5b27e55c03aa55ade1543</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Applied physics</topic><topic>Butyric acid</topic><topic>Characterization and Evaluation of Materials</topic><topic>Collection</topic><topic>Condensed Matter Physics</topic><topic>Current voltage characteristics</topic><topic>Devices</topic><topic>Electrical conduction</topic><topic>Electrical resistivity</topic><topic>Emissions control</topic><topic>Energy conversion efficiency</topic><topic>Esters</topic><topic>Incorporation</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Optoelectronic devices</topic><topic>Phosphorus</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Surface roughness</topic><topic>Surfaces and Interfaces</topic><topic>Thermionic emission</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lin, Yow-Jon</creatorcontrib><creatorcontrib>Lin, Hong-Zhi</creatorcontrib><creatorcontrib>Yan, Nian-Hao</creatorcontrib><creatorcontrib>Tang, Zhi-Hui</creatorcontrib><creatorcontrib>Chang, Hsing-Cheng</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lin, Yow-Jon</au><au>Lin, Hong-Zhi</au><au>Yan, Nian-Hao</au><au>Tang, Zhi-Hui</au><au>Chang, Hsing-Cheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Incorporation of black phosphorus into P3HT:PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2016-11-01</date><risdate>2016</risdate><volume>122</volume><issue>11</issue><spage>1</spage><epage>5</epage><pages>1-5</pages><artnum>974</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-016-0490-0</doi><tpages>5</tpages></addata></record> |
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| subjects | Applied physics Butyric acid Characterization and Evaluation of Materials Collection Condensed Matter Physics Current voltage characteristics Devices Electrical conduction Electrical resistivity Emissions control Energy conversion efficiency Esters Incorporation Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Optoelectronic devices Phosphorus Physics Physics and Astronomy Processes Surface roughness Surfaces and Interfaces Thermionic emission Thin Films |
| title | Incorporation of black phosphorus into P3HT:PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances |
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