Structural defects and photoluminescence studies of sol–gel prepared ZnO and Al-doped ZnO films
ZnO and Al-doped ZnO (AZO) films were synthesized using sol–gel spin-coating method. The powder XRD analysis revealed the stress relaxation mechanism upon Al doping in ZnO film. The reduction in the imaginary part of the dielectric constant and suppression of deep level acceptor type octahedral oxyg...
Gespeichert in:
| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2016-11, Vol.122 (11), p.1-9, Article 975 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 9 |
|---|---|
| container_issue | 11 |
| container_start_page | 1 |
| container_title | Applied physics. A, Materials science & processing |
| container_volume | 122 |
| creator | Sandeep, K. M. Bhat, Shreesha Dharmaprakash, S. M. |
| description | ZnO and Al-doped ZnO (AZO) films were synthesized using sol–gel spin-coating method. The powder XRD analysis revealed the stress relaxation mechanism upon Al doping in ZnO film. The reduction in the imaginary part of the dielectric constant and suppression of deep level acceptor type octahedral oxygen interstitial defects account for the reduction in carrier concentration in AZO with respect to ZnO. Electrical conductivity measurements and grain boundary conduction model are used to quantify the carrier concentration. From the Commission Internationale d’Eclairge diagram of ZnO and AZO, color parameters like dominant wavelength, color purity and luminosity are determined and reported for the first time. The prepared ZnO and AZO films show considerable blue emission. These films can be used for white light generation. |
| doi_str_mv | 10.1007/s00339-016-0512-y |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1880006815</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1880842870</sourcerecordid><originalsourceid>FETCH-LOGICAL-c349t-2844b7e667a402cc80ec26aa8871102ab52ae03c31ff0f4143bc1c0ecf6573d73</originalsourceid><addsrcrecordid>eNp1kLtOAzEQRS0EEuHxAXQr0dAYxo_sOiWKeElIKYCGxnK847CRs17s3SId_8Af8iU4CQVCYpqRRudezb2EnDG4ZADVVQIQYkKBlRTGjNP1HhkxKTiFUsA-GcFEVlSJSXlIjlJaQh7J-YiYpz4Oth-i8UWNDm2fCtPWRfcW-uCHVdNisthaLFI_1A2mIrgiBf_18blAX3QROxOxLl7b2VZ37Wkdup-Da_wqnZADZ3zC0599TF5ub56n9_RxdvcwvX6kVshJT7mScl5hWVZGArdWAVpeGqNUxRhwMx9zgyCsYM6Bkznb3DKbIVeOK1FX4phc7Hy7GN4HTL1eNfl1702LYUiaKZVDl4qNM3r-B12GIbb5uy2lJFcVZIrtKBtDShGd7mKzMnGtGehN6XpXus6l603pep01fKdJmW0XGH85_yv6BgM0haQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1880842870</pqid></control><display><type>article</type><title>Structural defects and photoluminescence studies of sol–gel prepared ZnO and Al-doped ZnO films</title><source>Springer Nature - Complete Springer Journals</source><creator>Sandeep, K. M. ; Bhat, Shreesha ; Dharmaprakash, S. M.</creator><creatorcontrib>Sandeep, K. M. ; Bhat, Shreesha ; Dharmaprakash, S. M.</creatorcontrib><description>ZnO and Al-doped ZnO (AZO) films were synthesized using sol–gel spin-coating method. The powder XRD analysis revealed the stress relaxation mechanism upon Al doping in ZnO film. The reduction in the imaginary part of the dielectric constant and suppression of deep level acceptor type octahedral oxygen interstitial defects account for the reduction in carrier concentration in AZO with respect to ZnO. Electrical conductivity measurements and grain boundary conduction model are used to quantify the carrier concentration. From the Commission Internationale d’Eclairge diagram of ZnO and AZO, color parameters like dominant wavelength, color purity and luminosity are determined and reported for the first time. The prepared ZnO and AZO films show considerable blue emission. These films can be used for white light generation.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-016-0512-y</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Applied physics ; Azo ; Carrier density ; Characterization and Evaluation of Materials ; Color ; Condensed Matter Physics ; Electrical resistivity ; Grain boundaries ; Machines ; Manufacturing ; Materials science ; Nanotechnology ; Optical and Electronic Materials ; Photoluminescence ; Physics ; Physics and Astronomy ; Processes ; Reduction ; Sol gel process ; Sol-gel processes ; Stress relaxation ; Surfaces and Interfaces ; Thin Films ; White light ; Zinc oxide</subject><ispartof>Applied physics. A, Materials science & processing, 2016-11, Vol.122 (11), p.1-9, Article 975</ispartof><rights>Springer-Verlag Berlin Heidelberg 2016</rights><rights>Copyright Springer Science & Business Media 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-2844b7e667a402cc80ec26aa8871102ab52ae03c31ff0f4143bc1c0ecf6573d73</citedby><cites>FETCH-LOGICAL-c349t-2844b7e667a402cc80ec26aa8871102ab52ae03c31ff0f4143bc1c0ecf6573d73</cites><orcidid>0000-0002-0654-9876</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-016-0512-y$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-016-0512-y$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Sandeep, K. M.</creatorcontrib><creatorcontrib>Bhat, Shreesha</creatorcontrib><creatorcontrib>Dharmaprakash, S. M.</creatorcontrib><title>Structural defects and photoluminescence studies of sol–gel prepared ZnO and Al-doped ZnO films</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>ZnO and Al-doped ZnO (AZO) films were synthesized using sol–gel spin-coating method. The powder XRD analysis revealed the stress relaxation mechanism upon Al doping in ZnO film. The reduction in the imaginary part of the dielectric constant and suppression of deep level acceptor type octahedral oxygen interstitial defects account for the reduction in carrier concentration in AZO with respect to ZnO. Electrical conductivity measurements and grain boundary conduction model are used to quantify the carrier concentration. From the Commission Internationale d’Eclairge diagram of ZnO and AZO, color parameters like dominant wavelength, color purity and luminosity are determined and reported for the first time. The prepared ZnO and AZO films show considerable blue emission. These films can be used for white light generation.</description><subject>Applied physics</subject><subject>Azo</subject><subject>Carrier density</subject><subject>Characterization and Evaluation of Materials</subject><subject>Color</subject><subject>Condensed Matter Physics</subject><subject>Electrical resistivity</subject><subject>Grain boundaries</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Reduction</subject><subject>Sol gel process</subject><subject>Sol-gel processes</subject><subject>Stress relaxation</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><subject>White light</subject><subject>Zinc oxide</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp1kLtOAzEQRS0EEuHxAXQr0dAYxo_sOiWKeElIKYCGxnK847CRs17s3SId_8Af8iU4CQVCYpqRRudezb2EnDG4ZADVVQIQYkKBlRTGjNP1HhkxKTiFUsA-GcFEVlSJSXlIjlJaQh7J-YiYpz4Oth-i8UWNDm2fCtPWRfcW-uCHVdNisthaLFI_1A2mIrgiBf_18blAX3QROxOxLl7b2VZ37Wkdup-Da_wqnZADZ3zC0599TF5ub56n9_RxdvcwvX6kVshJT7mScl5hWVZGArdWAVpeGqNUxRhwMx9zgyCsYM6Bkznb3DKbIVeOK1FX4phc7Hy7GN4HTL1eNfl1702LYUiaKZVDl4qNM3r-B12GIbb5uy2lJFcVZIrtKBtDShGd7mKzMnGtGehN6XpXus6l603pep01fKdJmW0XGH85_yv6BgM0haQ</recordid><startdate>20161101</startdate><enddate>20161101</enddate><creator>Sandeep, K. M.</creator><creator>Bhat, Shreesha</creator><creator>Dharmaprakash, S. M.</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-0654-9876</orcidid></search><sort><creationdate>20161101</creationdate><title>Structural defects and photoluminescence studies of sol–gel prepared ZnO and Al-doped ZnO films</title><author>Sandeep, K. M. ; Bhat, Shreesha ; Dharmaprakash, S. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-2844b7e667a402cc80ec26aa8871102ab52ae03c31ff0f4143bc1c0ecf6573d73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Applied physics</topic><topic>Azo</topic><topic>Carrier density</topic><topic>Characterization and Evaluation of Materials</topic><topic>Color</topic><topic>Condensed Matter Physics</topic><topic>Electrical resistivity</topic><topic>Grain boundaries</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Reduction</topic><topic>Sol gel process</topic><topic>Sol-gel processes</topic><topic>Stress relaxation</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><topic>White light</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sandeep, K. M.</creatorcontrib><creatorcontrib>Bhat, Shreesha</creatorcontrib><creatorcontrib>Dharmaprakash, S. M.</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sandeep, K. M.</au><au>Bhat, Shreesha</au><au>Dharmaprakash, S. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural defects and photoluminescence studies of sol–gel prepared ZnO and Al-doped ZnO films</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2016-11-01</date><risdate>2016</risdate><volume>122</volume><issue>11</issue><spage>1</spage><epage>9</epage><pages>1-9</pages><artnum>975</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>ZnO and Al-doped ZnO (AZO) films were synthesized using sol–gel spin-coating method. The powder XRD analysis revealed the stress relaxation mechanism upon Al doping in ZnO film. The reduction in the imaginary part of the dielectric constant and suppression of deep level acceptor type octahedral oxygen interstitial defects account for the reduction in carrier concentration in AZO with respect to ZnO. Electrical conductivity measurements and grain boundary conduction model are used to quantify the carrier concentration. From the Commission Internationale d’Eclairge diagram of ZnO and AZO, color parameters like dominant wavelength, color purity and luminosity are determined and reported for the first time. The prepared ZnO and AZO films show considerable blue emission. These films can be used for white light generation.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-016-0512-y</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-0654-9876</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0947-8396 |
| ispartof | Applied physics. A, Materials science & processing, 2016-11, Vol.122 (11), p.1-9, Article 975 |
| issn | 0947-8396 1432-0630 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1880006815 |
| source | Springer Nature - Complete Springer Journals |
| subjects | Applied physics Azo Carrier density Characterization and Evaluation of Materials Color Condensed Matter Physics Electrical resistivity Grain boundaries Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Photoluminescence Physics Physics and Astronomy Processes Reduction Sol gel process Sol-gel processes Stress relaxation Surfaces and Interfaces Thin Films White light Zinc oxide |
| title | Structural defects and photoluminescence studies of sol–gel prepared ZnO and Al-doped ZnO films |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T13%3A35%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Structural%20defects%20and%20photoluminescence%20studies%20of%20sol%E2%80%93gel%20prepared%20ZnO%20and%20Al-doped%20ZnO%20films&rft.jtitle=Applied%20physics.%20A,%20Materials%20science%20&%20processing&rft.au=Sandeep,%20K.%20M.&rft.date=2016-11-01&rft.volume=122&rft.issue=11&rft.spage=1&rft.epage=9&rft.pages=1-9&rft.artnum=975&rft.issn=0947-8396&rft.eissn=1432-0630&rft_id=info:doi/10.1007/s00339-016-0512-y&rft_dat=%3Cproquest_cross%3E1880842870%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1880842870&rft_id=info:pmid/&rfr_iscdi=true |