Enhanced terahertz emission from GaAs substrates deposited with aluminum nitride films caused by high interface electric fields

We report on the enhanced terahertz (THz) emission from SI-GaAs and n-GaAs wafer surfaces grown with aluminum nitride (AlN) thin films, by more than a factor of 2 and 4, respectively. This is attributed to the increased GaAs surface electric field as confirmed by calculations and photoreflectance me...

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Veröffentlicht in:	Applied surface science 2014-06, Vol.303, p.241-244
Hauptverfasser:	JACULBIA, R. B, BALGOS, M. H. M, MANGILA, N. S, TUMANGUIL, M. A. C, ESTACIO, E. S, SALVADOR, A. A, SOMINTAC, A. S
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum nitride Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition Electric fields Emission Exact sciences and technology Gallium arsenide Mathematical analysis Physics Semiconductors Substrates
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