Formation and characterization of locally strained Ge1- x Sn x /Ge microstructures
In this study, we have examined the formation of uniaxially strained Ge microstructures with embedded Ge1- x Sn x epitaxial layers and the microscopic local strain structure in Ge and Ge1- x Sn x using synchrotron X-ray microdiffraction and the finite element method. We achieved local heteroepitaxia...
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| Veröffentlicht in: | Thin solid films 2014-04, Vol.557, p.164-168 |
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| container_title | Thin solid films |
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| creator | Ike, Shinichi Moriyama, Yoshihiko Kurosawa, Masashi Taoka, Noriyuki Nakatsuka, Osamu Imai, Yasuhiko Kimura, Shigeru Tezuka, Tsutomu Zaima, Shigeaki |
| description | In this study, we have examined the formation of uniaxially strained Ge microstructures with embedded Ge1- x Sn x epitaxial layers and the microscopic local strain structure in Ge and Ge1- x Sn x using synchrotron X-ray microdiffraction and the finite element method. We achieved local heteroepitaxial growth of Ge0.947Sn0.053 layers on the Ge recess regions. Microdiffraction measurements reveal that an average uniaxial compressive strain of 0.19% is induced in Ge locally with Ge1- x Sn x stressors. In addition, we found that the Sn precipitation near the Ge1- x Sn x /Ge(001) interface occurs after post-deposition annealing at 500 degree C without the introduction of dislocation. It is considered that the local Sn precipitation occurs preferentially due to the larger residual stresses near the Ge1- x Sn x /Ge interface. |
| doi_str_mv | 10.1016/j.tsf.2013.08.126 |
| format | Article |
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We achieved local heteroepitaxial growth of Ge0.947Sn0.053 layers on the Ge recess regions. Microdiffraction measurements reveal that an average uniaxial compressive strain of 0.19% is induced in Ge locally with Ge1- x Sn x stressors. In addition, we found that the Sn precipitation near the Ge1- x Sn x /Ge(001) interface occurs after post-deposition annealing at 500 degree C without the introduction of dislocation. 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It is considered that the local Sn precipitation occurs preferentially due to the larger residual stresses near the Ge1- x Sn x /Ge interface.</description><subject>Compressive properties</subject><subject>Formations</subject><subject>Germanium</subject><subject>Mathematical analysis</subject><subject>Microstructure</subject><subject>Residual stress</subject><subject>Strain</subject><subject>Synchrotrons</subject><issn>0040-6090</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqVjr0KwjAUhTMoWH8ewC2jS-NNK6WdxZ9Z3UtIbzGSJpqbgvr0FvQFXM6B73zDYWwpQUiQxfomIrUiA5kLKIXMihFLADaQFlDBhE2JbgAgsyxP2GnvQ6ei8Y4r13B9VUHpiMG8v9C33HqtrH1xikEZhw0_oEz5k5_dEOsD8s7o4Ie117EPSHM2bpUlXPx6xlb73WV7TO_BP3qkWHeGNFqrHPqealmWwx0oqk3-h_oBEXZIfQ</recordid><startdate>20140401</startdate><enddate>20140401</enddate><creator>Ike, Shinichi</creator><creator>Moriyama, Yoshihiko</creator><creator>Kurosawa, Masashi</creator><creator>Taoka, Noriyuki</creator><creator>Nakatsuka, Osamu</creator><creator>Imai, Yasuhiko</creator><creator>Kimura, Shigeru</creator><creator>Tezuka, Tsutomu</creator><creator>Zaima, Shigeaki</creator><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140401</creationdate><title>Formation and characterization of locally strained Ge1- x Sn x /Ge microstructures</title><author>Ike, Shinichi ; Moriyama, Yoshihiko ; Kurosawa, Masashi ; Taoka, Noriyuki ; Nakatsuka, Osamu ; Imai, Yasuhiko ; Kimura, Shigeru ; Tezuka, Tsutomu ; Zaima, Shigeaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_18800006943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Compressive properties</topic><topic>Formations</topic><topic>Germanium</topic><topic>Mathematical analysis</topic><topic>Microstructure</topic><topic>Residual stress</topic><topic>Strain</topic><topic>Synchrotrons</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ike, Shinichi</creatorcontrib><creatorcontrib>Moriyama, Yoshihiko</creatorcontrib><creatorcontrib>Kurosawa, Masashi</creatorcontrib><creatorcontrib>Taoka, Noriyuki</creatorcontrib><creatorcontrib>Nakatsuka, Osamu</creatorcontrib><creatorcontrib>Imai, Yasuhiko</creatorcontrib><creatorcontrib>Kimura, Shigeru</creatorcontrib><creatorcontrib>Tezuka, Tsutomu</creatorcontrib><creatorcontrib>Zaima, Shigeaki</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ike, Shinichi</au><au>Moriyama, Yoshihiko</au><au>Kurosawa, Masashi</au><au>Taoka, Noriyuki</au><au>Nakatsuka, Osamu</au><au>Imai, Yasuhiko</au><au>Kimura, Shigeru</au><au>Tezuka, Tsutomu</au><au>Zaima, Shigeaki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Formation and characterization of locally strained Ge1- x Sn x /Ge microstructures</atitle><jtitle>Thin solid films</jtitle><date>2014-04-01</date><risdate>2014</risdate><volume>557</volume><spage>164</spage><epage>168</epage><pages>164-168</pages><issn>0040-6090</issn><abstract>In this study, we have examined the formation of uniaxially strained Ge microstructures with embedded Ge1- x Sn x epitaxial layers and the microscopic local strain structure in Ge and Ge1- x Sn x using synchrotron X-ray microdiffraction and the finite element method. 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| ispartof | Thin solid films, 2014-04, Vol.557, p.164-168 |
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| source | Elsevier ScienceDirect Journals Complete - AutoHoldings |
| subjects | Compressive properties Formations Germanium Mathematical analysis Microstructure Residual stress Strain Synchrotrons |
| title | Formation and characterization of locally strained Ge1- x Sn x /Ge microstructures |
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