Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4–B2H6–H2 gas mixture without substrate heating

Characteristics of B-doped Si epitaxial growth on Si(100) by using electron-cyclotron-resonance Ar plasma enhanced chemical vapor deposition without substrate heating in a SiH4–B2H6–H2–Ar gas mixture were investigated. B concentration in the deposited films increases with decreasing microwave power...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Thin solid films 2014-04, Vol.557, p.10-13
Hauptverfasser:	Abe, Yusuke, Sakuraba, Masao, Murota, Junichi
Format:	Artikel
Sprache:	eng
Schlagworte:	Boron Carrier density Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Doping Electrical activity Electrical resistivity Epitaxial growth Exact sciences and technology Gas mixtures Heat treatment Infrared spectroscopy Ion and electron beam-assisted deposition ion plating Materials science Methods of deposition of films and coatings film growth and epitaxy Microwaves Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma Plasma applications Plasma-based ion implantation and deposition Resistivity Silicon Silicon substrates Theory and models of film growth
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!