Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4–B2H6–H2 gas mixture without substrate heating

Characteristics of B-doped Si epitaxial growth on Si(100) by using electron-cyclotron-resonance Ar plasma enhanced chemical vapor deposition without substrate heating in a SiH4–B2H6–H2–Ar gas mixture were investigated. B concentration in the deposited films increases with decreasing microwave power for plasma generation. At the microwave power of 125W, the B concentration increases up to 5×1021cm−3. Deposition rate of the B-doped Si tends to be enhanced at the higher B2H6 partial pressure. Resistivity of the B-doped Si film tends to increase with decreasing the microwave power. Referring Irvin curve, in the case of 200W, the carrier concentration is estimated to be at least about 1017cm−3 at the B concentration of 1021cm−3. After heat treatment in N2 atmosphere at 200°C and 300°C for 2h, the resistivity drastically decreases to the value which corresponds to carrier concentration of around 1019cm−3. From Fourier transform infrared spectroscopy measurement, it is found that hydrogen incorporated in the as-deposited film desorbed by the heat treatment. •Heavily B-doped Si epitaxial growth on Si(100) can be realized without substrate heating.•B concentration increases with decreasing microwave power.•Deposition rate tends to be enhanced at higher B2H6 partial pressure.•At 200–300°C, resistivity drastically decreases with the reduction of hydrogen concentration.