Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn

Strained and unstrained GeSn layers on Si substrates were grown with Sn contents up to 20% and 25%, respectively. All metastable layer structures were fabricated by means of an ultra-low temperature molecular beam epitaxy process. The useful thickness of the metastable layers for a range of Sn conte...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Thin solid films 2014-04, Vol.557, p.169-172
Hauptverfasser:	Oehme, Michael, Kostecki, Konrad, Schmid, Marc, Oliveira, Filipe, Kasper, Erich, Schulze, Jörg
Format:	Artikel
Sprache:	eng
Schlagworte:	Breakdown Compressive properties Cross-disciplinary physics: materials science rheology Epitaxial growth Exact sciences and technology GeSn epitaxy Materials science Methods of deposition of films and coatings film growth and epitaxy Methods of nanofabrication Molecular beam epitaxy Molecular structure Molecular, atomic, ion, and chemical beam epitaxy Physics Si photonics Silicon substrates Theory and models of film growth Thin films Virtual substrate
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!