Ultra high hole mobilities in a pure strained Ge quantum well

Hole mobilities at low and room temperature (RT) have been studied for a strained sGe/SiGe heterostructure using standard Van der Pauw resistivity and Hall effect measurements. The range of magnetic field and temperatures used were −14T

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Thin solid films 2014-04, Vol.557, p.329-333
Hauptverfasser:	Mironov, O.A., Hassan, A.H.A., Morris, R.J.H., Dobbie, A., Uhlarz, M., Chrastina, D., Hague, J.P., Kiatgamolchai, S., Beanland, R., Gabani, S., Berkutov, I.B., Helm, M., Drachenko, O., Myronov, M., Leadley, D.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	BAMS Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Density Drift mobility Electrical properties of specific thin films Electrical resistivity Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Ge QW channel Hole mobility Magnetic fields ME-MSA Physics Sheets Silicon germanides Strained Ge Thermal properties of condensed matter Thermal properties of crystalline solids Thermodynamic properties Thin films
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Hole mobilities at low and room temperature (RT) have been studied for a strained sGe/SiGe heterostructure using standard Van der Pauw resistivity and Hall effect measurements. The range of magnetic field and temperatures used were −14T
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2013.10.118