Atomic layer deposition of Al2O3 on MoS2, WS2, WSe2, and h-BN: surface coverage and adsorption energy

Uniform deposition of high-k dielectrics on two-dimensional (2D) crystals is highly desirable for their use in future nano-electronic devices. Here, the surface coverage of the Al2O3 films grown by atomic layer deposition (ALD) was investigated on mechanically-exfoliated MoS2, WS2, WSe2, and h-BN fl...

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Veröffentlicht in:	RSC advances 2017-01, Vol.7 (2), p.884-889
Hauptverfasser:	Park, Taejin, Kim, Hoijoon, Leem, Mirine, Ahn, Wonsik, Choi, Seongheum, Kim, Jinbum, Uh, Joon, Kwon, Keewon, Jeong, Seong-Jun, Park, Seongjun, Kim, Yunseok, Kim, Hyoungsub
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Atomic layer deposition Crystals Deposition Dielectrics Molybdenum disulfide Precursors Surface chemistry
Online-Zugang:	Volltext
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