Two-dimensional potential, electric field and drain current model of source pocket hetero gate dielectric triple work function tunnel field-effect transistor

Low ON current and conduction for the negative gate-to-source voltage are the major drawbacks of the steep subthreshold slope tunnel field-effect transistor (TFET). Low work function on the source side of gate contact, high-κ gate dielectric and highly doped layer (delta doping) helps to enhance the...

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Veröffentlicht in:	Micro & nano letters 2017-01, Vol.12 (1), p.11-16
Hauptverfasser:	Sharma, Dheeraj, Raad, Bhagwan Ram, Yadav, Dharmendra Singh, Kondekar, Pravin, Nigam, Kaushal
Format:	Artikel
Sprache:	eng
Schlagworte:	2D Poisson equation 2D technology computer aided design ATLAS simulation Devices Dielectrics drain current model Drains electric field electric field extraction Electric fields Electric potential field effect transistors gate contact gate electrode Gates high‐k dielectric thin films high‐κ gate dielectric Kane band‐to‐band tunnelling generation rate low work function negative gate‐to‐source voltage Poisson equation semiconductor device models source pocket hetero gate dielectric triple work function tunnel field‐effect transistor steep subthreshold slope tunnel field‐effect transistor tri metal hetero gate dielectric delta doped TFET tunnel transistors Two dimensional models two‐dimensional Poisson equation two‐dimensional potential work function Work functions
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