Effect of anchoring atom and electrostatic gating on the electronic transport properties in single molecular electronic devices

The effect of anchoring atom and electrostatic gate on the electron transport through gated thiophene single molecular device is studied by utilizing non-equilibrium Green’s function coupled with self-consistent extended Huckel theory. Gated gold–molecule–gold junctions are built using thiophene (Tp...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of materials science. Materials in electronics 2017, Vol.28 (1), p.601-609
Hauptverfasser:	Hariharan, R. M., Thiruvadigal, D. John
Format:	Artikel
Sprache:	eng
Schlagworte:	Anchoring Bias Characterization and Evaluation of Materials Chemistry and Materials Science Devices Electron transport Electrostatics Field effect transistors Materials Science Optical and Electronic Materials Semiconductor devices Thiophenes
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!