Wavelength‐Tunable Electroluminescent Light Sources from Individual Ga‐Doped ZnO Microwires

Electrically driven wavelength‐tunable light emission from biased individual Ga‐doped ZnO microwires (ZnO:Ga MWs) is demonstrated. Single crystalline ZnO:Ga MWs with different Ga‐doping concentrations have been synthesized using a one‐step chemical vapor deposition method. Strong electrically driven light emission from individual ZnO:Ga MW based devices is realized with tunable colors, and the emission region is localized toward the center of the wires. Increasing Ga‐doping concentration in the MWs can lead to the redshift of electroluminescent emissions in the visible range. Interestingly, owing to the lack of rectification characteristics, relevant electrical measurement results show that the alternating current‐driven light emission functions excellently on the ZnO:Ga MWs. Consequently, individual ZnO:Ga MWs, which can be analogous to incandescent sources, offer unique possibilities for future electroluminescence light sources. This typical multicolor emitter can be used to rival and complement other conventional semiconductor devices in displays and lighting. Electrically driven wavelength‐tunable light emission from biased individual Ga‐doped ZnO (ZnO:Ga) microwires is demonstrated. This kind of electroluminescence (EL) device possess excellent performance in color stability, tunability of EL wavelengths, and light‐emitting diodes characteristics. Consequently, individual ZnO:Ga microwires, which can be analogous to incandescent sources, offer unique possibilities for future EL lighting sources.