Crystal Phases in Hybrid Metal–Semiconductor Nanowire Devices

Crystal Phases in Hybrid Metal–Semiconductor Nanowire Devices

We investigate the metallic phases observed in hybrid metal-GaAs nanowire devices obtained by controlled thermal annealing of Ni/Au electrodes. Devices are fabricated onto a SiN membrane compatible with transmission electron microscopy studies. Energy dispersive X-ray spectroscopy allows us to show...

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Veröffentlicht in:Nano letters 2017-04, Vol.17 (4), p.2336-2341
Hauptverfasser: David, J, Rossella, F, Rocci, M, Ercolani, D, Sorba, L, Beltram, F, Gemmi, M, Roddaro, S
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container_end_page 2341
container_issue 4
container_start_page 2336
container_title Nano letters
container_volume 17
creator David, J
Rossella, F
Rocci, M
Ercolani, D
Sorba, L
Beltram, F
Gemmi, M
Roddaro, S
description We investigate the metallic phases observed in hybrid metal-GaAs nanowire devices obtained by controlled thermal annealing of Ni/Au electrodes. Devices are fabricated onto a SiN membrane compatible with transmission electron microscopy studies. Energy dispersive X-ray spectroscopy allows us to show that the nanowire body includes two Ni-rich phases that thanks to an innovative use of electron diffraction tomography can be unambiguously identified as Ni3GaAs and Ni5As2 crystals. The mechanisms of Ni incorporation leading to the observed phenomenology are discussed.
doi_str_mv 10.1021/acs.nanolett.6b05223
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title Crystal Phases in Hybrid Metal–Semiconductor Nanowire Devices
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