Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon

An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si N ) waveguide layer on silicon. It not only provides large...

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Veröffentlicht in:Optics letters 2017-02, Vol.42 (4), p.803-806
Hauptverfasser: Chang, Lin, Pfeiffer, Martin H P, Volet, Nicolas, Zervas, Michael, Peters, Jon D, Manganelli, Costanza L, Stanton, Eric J, Li, Yifei, Kippenberg, Tobias J, Bowers, John E
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container_end_page 806
container_issue 4
container_start_page 803
container_title Optics letters
container_volume 42
creator Chang, Lin
Pfeiffer, Martin H P
Volet, Nicolas
Zervas, Michael
Peters, Jon D
Manganelli, Costanza L
Stanton, Eric J
Li, Yifei
Kippenberg, Tobias J
Bowers, John E
description An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si N ) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si N and the LN-Si N waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.
doi_str_mv 10.1364/ol.42.000803
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title Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon
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