Effect of thickness on crystallization behavior in GeSb sub(9) phase change films
Phase change behavior in GeSb sub(9) thin films with different thickness were investigated by utilizing in situ resistance measurements. It is found that the crystallization temperatures and resistances increase with decreasing of film thickness. The analysis of X-ray diffraction indicated that the...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2016-12, Vol.27 (12), p.13148-13153 |
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| container_issue | 12 |
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| container_title | Journal of materials science. Materials in electronics |
| container_volume | 27 |
| creator | Zhang, Wen Wu, Dongyan Hu, Yifeng Jiang, Airu Xu, Junshu Liu, Hao Bu, Shupo Shi, Ruihua |
| description | Phase change behavior in GeSb sub(9) thin films with different thickness were investigated by utilizing in situ resistance measurements. It is found that the crystallization temperatures and resistances increase with decreasing of film thickness. The analysis of X-ray diffraction indicated that the grain size decreases and the crystallization is suppressed by decreasing film thickness. The surface roughness of thin films was measured by atomic forced microscopy. The obtained values of Avrami indexes indicate that the nucleation rate decreases with decreasing the film thickness. The phase change memory devices based on GeSb sub(9) thin films were fabricated and the lower RESET power consumption was observed for thinner film. |
| doi_str_mv | 10.1007/s10854-016-5460-y |
| format | Article |
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Materials in electronics</title><description>Phase change behavior in GeSb sub(9) thin films with different thickness were investigated by utilizing in situ resistance measurements. It is found that the crystallization temperatures and resistances increase with decreasing of film thickness. The analysis of X-ray diffraction indicated that the grain size decreases and the crystallization is suppressed by decreasing film thickness. The surface roughness of thin films was measured by atomic forced microscopy. The obtained values of Avrami indexes indicate that the nucleation rate decreases with decreasing the film thickness. The phase change memory devices based on GeSb sub(9) thin films were fabricated and the lower RESET power consumption was observed for thinner film.</description><subject>Crystallization</subject><subject>Data storage</subject><subject>Electronics</subject><subject>Film thickness</subject><subject>Nucleation</subject><subject>Phase change</subject><subject>Thickness</subject><subject>Thin films</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqVyj1OxDAQQGELgUT4OQDdlEthGCe2k63RAi2Cgm7lWGNi8NpLxkFaTg8FF6B6-qQnxJXCG4XY37LCwWiJykqjLcrDkWiU6Tuph_b1WDS4Nr3Upm1PxRnzOyJa3Q2NeNqEQL5CCVCn6D8yMUPJ4OcDV5dS_HY1_nqkyX3FMkPM8EDPI_AyrtbXsJ8cE_jJ5TeCENOOL8RJcInp8q_nYnW_ebl7lPu5fC7EdbuL7Ckll6ksvFWD1WZoNdruH-sPWvNJsA</recordid><startdate>20161201</startdate><enddate>20161201</enddate><creator>Zhang, Wen</creator><creator>Wu, Dongyan</creator><creator>Hu, Yifeng</creator><creator>Jiang, Airu</creator><creator>Xu, Junshu</creator><creator>Liu, Hao</creator><creator>Bu, Shupo</creator><creator>Shi, Ruihua</creator><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20161201</creationdate><title>Effect of thickness on crystallization behavior in GeSb sub(9) phase change films</title><author>Zhang, Wen ; Wu, Dongyan ; Hu, Yifeng ; Jiang, Airu ; Xu, Junshu ; Liu, Hao ; Bu, Shupo ; Shi, Ruihua</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_18645824063</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Crystallization</topic><topic>Data storage</topic><topic>Electronics</topic><topic>Film thickness</topic><topic>Nucleation</topic><topic>Phase change</topic><topic>Thickness</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Wen</creatorcontrib><creatorcontrib>Wu, Dongyan</creatorcontrib><creatorcontrib>Hu, Yifeng</creatorcontrib><creatorcontrib>Jiang, Airu</creatorcontrib><creatorcontrib>Xu, Junshu</creatorcontrib><creatorcontrib>Liu, Hao</creatorcontrib><creatorcontrib>Bu, Shupo</creatorcontrib><creatorcontrib>Shi, Ruihua</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Wen</au><au>Wu, Dongyan</au><au>Hu, Yifeng</au><au>Jiang, Airu</au><au>Xu, Junshu</au><au>Liu, Hao</au><au>Bu, Shupo</au><au>Shi, Ruihua</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of thickness on crystallization behavior in GeSb sub(9) phase change films</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><date>2016-12-01</date><risdate>2016</risdate><volume>27</volume><issue>12</issue><spage>13148</spage><epage>13153</epage><pages>13148-13153</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Phase change behavior in GeSb sub(9) thin films with different thickness were investigated by utilizing in situ resistance measurements. It is found that the crystallization temperatures and resistances increase with decreasing of film thickness. The analysis of X-ray diffraction indicated that the grain size decreases and the crystallization is suppressed by decreasing film thickness. The surface roughness of thin films was measured by atomic forced microscopy. The obtained values of Avrami indexes indicate that the nucleation rate decreases with decreasing the film thickness. The phase change memory devices based on GeSb sub(9) thin films were fabricated and the lower RESET power consumption was observed for thinner film.</abstract><doi>10.1007/s10854-016-5460-y</doi></addata></record> |
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| language | eng |
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| subjects | Crystallization Data storage Electronics Film thickness Nucleation Phase change Thickness Thin films |
| title | Effect of thickness on crystallization behavior in GeSb sub(9) phase change films |
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