Enhanced thermoelectric properties of Cu3SbSe4 by germanium doping

Ge doped Cu3SbSe4 semiconductors with Cu deficiencies were synthesized by melting and spark plasma sintering for the investigation of their thermoelectric transport properties. Ge atoms can successfully substitute Sb lattice sites, and result in lattice shrinkage with increasing Ge content. Doping w...

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Veröffentlicht in:	Materials letters 2017-01, Vol.186, p.227-230
Hauptverfasser:	Chang, Chia-Hsiang, Chen, Cheng-Lung, Chiu, Wan-Ting, Chen, Yang-Yuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Doping Germanium Germanium doping Heat transfer Lattices Phonon Power factor Semiconductors Sintering Thermal conductivity Thermoelectric materials Thermoelectricity
Online-Zugang:	Volltext
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