Investigate the growth mechanism of Cu2FeSnS4 thin films by sulfurization of metallic precursor
Cu2FeSnS4 (CFTS) thin films have been prepared on glass substrates by a process of sputtering metallic precursor with post-sulfurization. By means of various holding times, the growth mechanism of CFTS has been determined by X-ray diffraction and Raman patterns. Three steps have been involved, the b...
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| Veröffentlicht in: | Materials letters 2017-01, Vol.186, p.138-141 |
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| creator | Meng, Xiankuan Deng, Hongmei Zhang, Qiao Sun, Lin Yang, Pingxiong Chu, Junhao |
| description | Cu2FeSnS4 (CFTS) thin films have been prepared on glass substrates by a process of sputtering metallic precursor with post-sulfurization. By means of various holding times, the growth mechanism of CFTS has been determined by X-ray diffraction and Raman patterns. Three steps have been involved, the binary-phases CuSx, FeSx and SnSx are synthesized in the preliminary stage, and afterwards, CuSx reacts with FeSx to generate ternary-compound CuFeS2. At last, the target product CFTS is obtained with the increasing holding time of sulfurization. All the thin films have smooth and closely packed surface, and longer holding time is in favor of the grain growth. The thickness of these thin films is around 1µm.
•The growth mechanism of CFTS has been investigated.•The grain growth of CFTS can be divided into three stages.•Vibrational mode of CFS-A1 has been calculated as 273cm−1. |
| doi_str_mv | 10.1016/j.matlet.2016.10.002 |
| format | Article |
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•The growth mechanism of CFTS has been investigated.•The grain growth of CFTS can be divided into three stages.•Vibrational mode of CFS-A1 has been calculated as 273cm−1.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2016.10.002</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Cu2FeSnS4 ; Diffraction patterns ; Grain growth ; Precursors ; Sputtering ; Sulfurization ; Synthesis ; Thin films ; X-rays</subject><ispartof>Materials letters, 2017-01, Vol.186, p.138-141</ispartof><rights>2016 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c339t-b46297affaf7cdf654bbf9bea52d7aa2791c208d3fc4554158275681c90b24663</citedby><cites>FETCH-LOGICAL-c339t-b46297affaf7cdf654bbf9bea52d7aa2791c208d3fc4554158275681c90b24663</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0167577X16315956$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Meng, Xiankuan</creatorcontrib><creatorcontrib>Deng, Hongmei</creatorcontrib><creatorcontrib>Zhang, Qiao</creatorcontrib><creatorcontrib>Sun, Lin</creatorcontrib><creatorcontrib>Yang, Pingxiong</creatorcontrib><creatorcontrib>Chu, Junhao</creatorcontrib><title>Investigate the growth mechanism of Cu2FeSnS4 thin films by sulfurization of metallic precursor</title><title>Materials letters</title><description>Cu2FeSnS4 (CFTS) thin films have been prepared on glass substrates by a process of sputtering metallic precursor with post-sulfurization. By means of various holding times, the growth mechanism of CFTS has been determined by X-ray diffraction and Raman patterns. Three steps have been involved, the binary-phases CuSx, FeSx and SnSx are synthesized in the preliminary stage, and afterwards, CuSx reacts with FeSx to generate ternary-compound CuFeS2. At last, the target product CFTS is obtained with the increasing holding time of sulfurization. All the thin films have smooth and closely packed surface, and longer holding time is in favor of the grain growth. The thickness of these thin films is around 1µm.
•The growth mechanism of CFTS has been investigated.•The grain growth of CFTS can be divided into three stages.•Vibrational mode of CFS-A1 has been calculated as 273cm−1.</description><subject>Cu2FeSnS4</subject><subject>Diffraction patterns</subject><subject>Grain growth</subject><subject>Precursors</subject><subject>Sputtering</subject><subject>Sulfurization</subject><subject>Synthesis</subject><subject>Thin films</subject><subject>X-rays</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LAzEQxYMoWKvfwEOOXnZNstnN7kWQYrUgeKiCt5DNTtqU_VOTbKV-erPUs6dhZt578H4I3VKSUkKL-13aqdBCSFnc4iklhJ2hGS1FlvBKVOdoFh8iyYX4vERX3u8IIbwifIbkqj-AD3ajAuCwBbxxw3fY4g70VvXWd3gweDGyJaz7NY8K22Nj287j-oj92JrR2R8V7NBPwg6Calur8d6BHp0f3DW6MKr1cPM35-hj-fS-eEle355Xi8fXRGdZFZKaF6wSyhhlhG5MkfO6NlUNKmeNUIqJimpGyiYzmuc5p3nJRF6UVFekZrwosjm6O-Xu3fA1xkays15D26oehtFLWhY8F5GPiFJ-kmo3eO_AyL2znXJHSYmceMqdPPGUE8_pGnlG28PJBrHGwYKTXlvoNTQ2lg2yGez_Ab_Z4oGd</recordid><startdate>20170101</startdate><enddate>20170101</enddate><creator>Meng, Xiankuan</creator><creator>Deng, Hongmei</creator><creator>Zhang, Qiao</creator><creator>Sun, Lin</creator><creator>Yang, Pingxiong</creator><creator>Chu, Junhao</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20170101</creationdate><title>Investigate the growth mechanism of Cu2FeSnS4 thin films by sulfurization of metallic precursor</title><author>Meng, Xiankuan ; Deng, Hongmei ; Zhang, Qiao ; Sun, Lin ; Yang, Pingxiong ; Chu, Junhao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c339t-b46297affaf7cdf654bbf9bea52d7aa2791c208d3fc4554158275681c90b24663</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Cu2FeSnS4</topic><topic>Diffraction patterns</topic><topic>Grain growth</topic><topic>Precursors</topic><topic>Sputtering</topic><topic>Sulfurization</topic><topic>Synthesis</topic><topic>Thin films</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Meng, Xiankuan</creatorcontrib><creatorcontrib>Deng, Hongmei</creatorcontrib><creatorcontrib>Zhang, Qiao</creatorcontrib><creatorcontrib>Sun, Lin</creatorcontrib><creatorcontrib>Yang, Pingxiong</creatorcontrib><creatorcontrib>Chu, Junhao</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Meng, Xiankuan</au><au>Deng, Hongmei</au><au>Zhang, Qiao</au><au>Sun, Lin</au><au>Yang, Pingxiong</au><au>Chu, Junhao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigate the growth mechanism of Cu2FeSnS4 thin films by sulfurization of metallic precursor</atitle><jtitle>Materials letters</jtitle><date>2017-01-01</date><risdate>2017</risdate><volume>186</volume><spage>138</spage><epage>141</epage><pages>138-141</pages><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>Cu2FeSnS4 (CFTS) thin films have been prepared on glass substrates by a process of sputtering metallic precursor with post-sulfurization. By means of various holding times, the growth mechanism of CFTS has been determined by X-ray diffraction and Raman patterns. Three steps have been involved, the binary-phases CuSx, FeSx and SnSx are synthesized in the preliminary stage, and afterwards, CuSx reacts with FeSx to generate ternary-compound CuFeS2. At last, the target product CFTS is obtained with the increasing holding time of sulfurization. All the thin films have smooth and closely packed surface, and longer holding time is in favor of the grain growth. The thickness of these thin films is around 1µm.
•The growth mechanism of CFTS has been investigated.•The grain growth of CFTS can be divided into three stages.•Vibrational mode of CFS-A1 has been calculated as 273cm−1.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2016.10.002</doi><tpages>4</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Cu2FeSnS4 Diffraction patterns Grain growth Precursors Sputtering Sulfurization Synthesis Thin films X-rays |
| title | Investigate the growth mechanism of Cu2FeSnS4 thin films by sulfurization of metallic precursor |
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