High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes

High power flip‐chip light‐emitting diodes with distributed n‐type via‐hole‐based two‐level metallization electrodes (TLM‐FCLED) were fabricated and investigated. Comparison tests altering Ni metal thickness and annealing temperature were performed to optimize the reflectivity of Ni/Ag reflective la...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2016-12, Vol.213 (12), p.3150-3156
Hauptverfasser:	Lv, Jiajiang, Zheng, Chenju, Chen, Quan, Zhou, Shengjun, Liu, Sheng
Format:	Artikel
Sprache:	eng
Schlagworte:	Degradation Electrodes flip-chip Gallium nitrides high power LEDs Light emitting diodes Materials science Metallizing Nickel Silver two-level metallization via-hole-based electrode
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!