High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes
High power flip‐chip light‐emitting diodes with distributed n‐type via‐hole‐based two‐level metallization electrodes (TLM‐FCLED) were fabricated and investigated. Comparison tests altering Ni metal thickness and annealing temperature were performed to optimize the reflectivity of Ni/Ag reflective la...
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| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2016-12, Vol.213 (12), p.3150-3156 |
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| container_title | Physica status solidi. A, Applications and materials science |
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| creator | Lv, Jiajiang Zheng, Chenju Chen, Quan Zhou, Shengjun Liu, Sheng |
| description | High power flip‐chip light‐emitting diodes with distributed n‐type via‐hole‐based two‐level metallization electrodes (TLM‐FCLED) were fabricated and investigated. Comparison tests altering Ni metal thickness and annealing temperature were performed to optimize the reflectivity of Ni/Ag reflective layer, which enhanced the light extraction efficiency. On the other hand, via‐hole‐based n‐contact electrodes structure increased the utilization ratio of active region area, and the introduction of first metallization layer allowed n‐contact to be arranged uniformly on the entire n‐GaN surface, which exhibited a more favorable current spreading uniformity. As a result, the light output power (LOP) of TLM‐FCLED was 9.23 and 26.55% higher than that of conventional high power LED (CHP‐LED) at 350 and 1050 mA. The CHP‐LED exhibited 13.39% external quantum efficiency (EQE) degradation from 350 to 1050 mA, whereas the TLM‐FCLED exhibited only 6.88% EQE degradation. It is noted that the maximum LOP was about 1264 mW at 1830 mA, thereby, suggesting the potential of its application in ultra‐high power applications. |
| doi_str_mv | 10.1002/pssa.201600319 |
| format | Article |
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Comparison tests altering Ni metal thickness and annealing temperature were performed to optimize the reflectivity of Ni/Ag reflective layer, which enhanced the light extraction efficiency. On the other hand, via‐hole‐based n‐contact electrodes structure increased the utilization ratio of active region area, and the introduction of first metallization layer allowed n‐contact to be arranged uniformly on the entire n‐GaN surface, which exhibited a more favorable current spreading uniformity. As a result, the light output power (LOP) of TLM‐FCLED was 9.23 and 26.55% higher than that of conventional high power LED (CHP‐LED) at 350 and 1050 mA. The CHP‐LED exhibited 13.39% external quantum efficiency (EQE) degradation from 350 to 1050 mA, whereas the TLM‐FCLED exhibited only 6.88% EQE degradation. It is noted that the maximum LOP was about 1264 mW at 1830 mA, thereby, suggesting the potential of its application in ultra‐high power applications.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.201600319</identifier><language>eng</language><publisher>Weinheim: Blackwell Publishing Ltd</publisher><subject>Degradation ; Electrodes ; flip-chip ; Gallium nitrides ; high power LEDs ; Light emitting diodes ; Materials science ; Metallizing ; Nickel ; Silver ; two-level metallization ; via-hole-based electrode</subject><ispartof>Physica status solidi. A, Applications and materials science, 2016-12, Vol.213 (12), p.3150-3156</ispartof><rights>2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3499-892488e6f9db6d497eb78c77facc23f7a6d1ca6ee8fc8c76acc2dfaad969af033</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssa.201600319$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssa.201600319$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Lv, Jiajiang</creatorcontrib><creatorcontrib>Zheng, Chenju</creatorcontrib><creatorcontrib>Chen, Quan</creatorcontrib><creatorcontrib>Zhou, Shengjun</creatorcontrib><creatorcontrib>Liu, Sheng</creatorcontrib><title>High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes</title><title>Physica status solidi. A, Applications and materials science</title><addtitle>Phys. Status Solidi A</addtitle><description>High power flip‐chip light‐emitting diodes with distributed n‐type via‐hole‐based two‐level metallization electrodes (TLM‐FCLED) were fabricated and investigated. Comparison tests altering Ni metal thickness and annealing temperature were performed to optimize the reflectivity of Ni/Ag reflective layer, which enhanced the light extraction efficiency. On the other hand, via‐hole‐based n‐contact electrodes structure increased the utilization ratio of active region area, and the introduction of first metallization layer allowed n‐contact to be arranged uniformly on the entire n‐GaN surface, which exhibited a more favorable current spreading uniformity. As a result, the light output power (LOP) of TLM‐FCLED was 9.23 and 26.55% higher than that of conventional high power LED (CHP‐LED) at 350 and 1050 mA. The CHP‐LED exhibited 13.39% external quantum efficiency (EQE) degradation from 350 to 1050 mA, whereas the TLM‐FCLED exhibited only 6.88% EQE degradation. It is noted that the maximum LOP was about 1264 mW at 1830 mA, thereby, suggesting the potential of its application in ultra‐high power applications.</description><subject>Degradation</subject><subject>Electrodes</subject><subject>flip-chip</subject><subject>Gallium nitrides</subject><subject>high power LEDs</subject><subject>Light emitting diodes</subject><subject>Materials science</subject><subject>Metallizing</subject><subject>Nickel</subject><subject>Silver</subject><subject>two-level metallization</subject><subject>via-hole-based electrode</subject><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNpdkM9PwjAUxxejiYhePTfx4qXQrVu7HgkikCAS0ZB4aUr35oplm-sA8a93BMPBw8v7kc_35b2v5936pOMTEnRL51QnID4jhPrizGv5MQswa-rzU03IpXfl3IqQMAq53_LeR-YjQ2WxgwqN86GadptAqTUl1pkp0WTw4NDO1BnaGoWzwgJeKgcJqncFtrAFi9ZQK2vNj6pNkSOwoOuqSMBdexepsg5u_nLbe3scvPZHePI8HPd7E6xpKASORRDGMbBUJEuWhILDksea81RpHdCUK5b4WjGAONXNnB3GSapUIphQKaG07d0f95ZV8bUBV8u1cRqsVTkUGyeb18OI0SDgDXr3D10VmypvrmuoMOKU8ehAiSO1Mxb2sqzMWlV76RN58FkefJYnn-VsPu-dukaLj1rjavg-aVX1KRmnPJKL6VDO-k-jl4WI5Zz-Aob5g6w</recordid><startdate>201612</startdate><enddate>201612</enddate><creator>Lv, Jiajiang</creator><creator>Zheng, Chenju</creator><creator>Chen, Quan</creator><creator>Zhou, Shengjun</creator><creator>Liu, Sheng</creator><general>Blackwell Publishing Ltd</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201612</creationdate><title>High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes</title><author>Lv, Jiajiang ; Zheng, Chenju ; Chen, Quan ; Zhou, Shengjun ; Liu, Sheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3499-892488e6f9db6d497eb78c77facc23f7a6d1ca6ee8fc8c76acc2dfaad969af033</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Degradation</topic><topic>Electrodes</topic><topic>flip-chip</topic><topic>Gallium nitrides</topic><topic>high power LEDs</topic><topic>Light emitting diodes</topic><topic>Materials science</topic><topic>Metallizing</topic><topic>Nickel</topic><topic>Silver</topic><topic>two-level metallization</topic><topic>via-hole-based electrode</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lv, Jiajiang</creatorcontrib><creatorcontrib>Zheng, Chenju</creatorcontrib><creatorcontrib>Chen, Quan</creatorcontrib><creatorcontrib>Zhou, Shengjun</creatorcontrib><creatorcontrib>Liu, Sheng</creatorcontrib><collection>Istex</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lv, Jiajiang</au><au>Zheng, Chenju</au><au>Chen, Quan</au><au>Zhou, Shengjun</au><au>Liu, Sheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><addtitle>Phys. Status Solidi A</addtitle><date>2016-12</date><risdate>2016</risdate><volume>213</volume><issue>12</issue><spage>3150</spage><epage>3156</epage><pages>3150-3156</pages><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>High power flip‐chip light‐emitting diodes with distributed n‐type via‐hole‐based two‐level metallization electrodes (TLM‐FCLED) were fabricated and investigated. Comparison tests altering Ni metal thickness and annealing temperature were performed to optimize the reflectivity of Ni/Ag reflective layer, which enhanced the light extraction efficiency. On the other hand, via‐hole‐based n‐contact electrodes structure increased the utilization ratio of active region area, and the introduction of first metallization layer allowed n‐contact to be arranged uniformly on the entire n‐GaN surface, which exhibited a more favorable current spreading uniformity. As a result, the light output power (LOP) of TLM‐FCLED was 9.23 and 26.55% higher than that of conventional high power LED (CHP‐LED) at 350 and 1050 mA. The CHP‐LED exhibited 13.39% external quantum efficiency (EQE) degradation from 350 to 1050 mA, whereas the TLM‐FCLED exhibited only 6.88% EQE degradation. It is noted that the maximum LOP was about 1264 mW at 1830 mA, thereby, suggesting the potential of its application in ultra‐high power applications.</abstract><cop>Weinheim</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1002/pssa.201600319</doi><tpages>7</tpages></addata></record> |
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| subjects | Degradation Electrodes flip-chip Gallium nitrides high power LEDs Light emitting diodes Materials science Metallizing Nickel Silver two-level metallization via-hole-based electrode |
| title | High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes |
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