Influence of using amorphous silicon stack as front heterojunction structure on performance of interdigitated back contact-heterojunction solar cell (IBC-HJ)
Interdigitated back contact-heterojunction (IBC-HJ) solar cells can have a conversion efficiency of over 25%. However, the front surface passivation and structure have a great influence on the properties of the IBC-HJ solar cell. In this paper, detailed numerical simulations have been performed to i...
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| Veröffentlicht in: | Frontiers in Energy 2017-03, Vol.11 (1), p.96-104 |
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| creator | JIA, Rui TAO, Ke LI, Qiang DAI, Xiaowan SUN, Hengchao SUN, Yun JIN, Zhi LIU, Xinyu |
| description | Interdigitated back contact-heterojunction (IBC-HJ) solar cells can have a conversion efficiency of over 25%. However, the front surface passivation and structure have a great influence on the properties of the IBC-HJ solar cell. In this paper, detailed numerical simulations have been performed to investigate the potential of front surface field (FSF) offered by stack of n-type doped and intrinsic amorphous silicon (a-Si) layers on the front surface of IBC-HJ solar cells. Simulations results clearly indicate that the electric field of FSF should be strong enough to repel minority carries and cumulate major carriers near the front surface. However, the over-strong electric field tends to drive electrons into a-Si layer, leading to severe recombination loss. The n-type doped amorphous silicon (n-a-Si) layer has been optimized in terms of doping level and thickness. The optimized intrinsic amorphous silicon (i-a-Si) layer should be as thin as possible with an energy band gap ( E g) larger than 1.4 eV. In addition, the simulations concerning interface defects strongly suggest that FSF is essential when the front surface is not passivated perfectly. Without FSF, the IBC-HJ solar cells may become more sensitive to interface defect density. |
| doi_str_mv | 10.1007/s11708-016-0434-6 |
| format | Article |
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However, the front surface passivation and structure have a great influence on the properties of the IBC-HJ solar cell. In this paper, detailed numerical simulations have been performed to investigate the potential of front surface field (FSF) offered by stack of n-type doped and intrinsic amorphous silicon (a-Si) layers on the front surface of IBC-HJ solar cells. Simulations results clearly indicate that the electric field of FSF should be strong enough to repel minority carries and cumulate major carriers near the front surface. However, the over-strong electric field tends to drive electrons into a-Si layer, leading to severe recombination loss. The n-type doped amorphous silicon (n-a-Si) layer has been optimized in terms of doping level and thickness. The optimized intrinsic amorphous silicon (i-a-Si) layer should be as thin as possible with an energy band gap ( E g) larger than 1.4 eV. In addition, the simulations concerning interface defects strongly suggest that FSF is essential when the front surface is not passivated perfectly. Without FSF, the IBC-HJ solar cells may become more sensitive to interface defect density.</description><identifier>ISSN: 2095-1701</identifier><identifier>EISSN: 2095-1698</identifier><identifier>DOI: 10.1007/s11708-016-0434-6</identifier><language>eng</language><publisher>Beijing: Higher Education Press</publisher><subject>Alliances ; Aluminum ; Amorphous silicon ; Computer simulation ; Defects ; Doping ; Electric fields ; Energy ; Energy Systems ; front surface field ; interdigitated back contact-heterojunction solar cells ; Normal distribution ; Optimization ; Photovoltaic cells ; Probability distribution ; Research Article ; Silicon ; Silicon wafers ; Simulation ; simulations ; Solar cells ; Solar energy ; Stacks ; Studies ; Sun</subject><ispartof>Frontiers in Energy, 2017-03, Vol.11 (1), p.96-104</ispartof><rights>Copyright reserved, 2016, Higher Education Press and Springer-Verlag Berlin Heidelberg</rights><rights>Higher Education Press and Springer-Verlag Berlin Heidelberg 2017</rights><rights>Frontiers in Energy is a copyright of Springer, 2017.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c497t-86bfe9a082c659d2ccd90586612c334cb435ae250fb4a3e8c4ace859cea3d6cd3</citedby><cites>FETCH-LOGICAL-c497t-86bfe9a082c659d2ccd90586612c334cb435ae250fb4a3e8c4ace859cea3d6cd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11708-016-0434-6$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11708-016-0434-6$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>JIA, Rui</creatorcontrib><creatorcontrib>TAO, Ke</creatorcontrib><creatorcontrib>LI, Qiang</creatorcontrib><creatorcontrib>DAI, Xiaowan</creatorcontrib><creatorcontrib>SUN, Hengchao</creatorcontrib><creatorcontrib>SUN, Yun</creatorcontrib><creatorcontrib>JIN, Zhi</creatorcontrib><creatorcontrib>LIU, Xinyu</creatorcontrib><title>Influence of using amorphous silicon stack as front heterojunction structure on performance of interdigitated back contact-heterojunction solar cell (IBC-HJ)</title><title>Frontiers in Energy</title><addtitle>Front. Energy</addtitle><description>Interdigitated back contact-heterojunction (IBC-HJ) solar cells can have a conversion efficiency of over 25%. However, the front surface passivation and structure have a great influence on the properties of the IBC-HJ solar cell. In this paper, detailed numerical simulations have been performed to investigate the potential of front surface field (FSF) offered by stack of n-type doped and intrinsic amorphous silicon (a-Si) layers on the front surface of IBC-HJ solar cells. Simulations results clearly indicate that the electric field of FSF should be strong enough to repel minority carries and cumulate major carriers near the front surface. However, the over-strong electric field tends to drive electrons into a-Si layer, leading to severe recombination loss. The n-type doped amorphous silicon (n-a-Si) layer has been optimized in terms of doping level and thickness. The optimized intrinsic amorphous silicon (i-a-Si) layer should be as thin as possible with an energy band gap ( E g) larger than 1.4 eV. In addition, the simulations concerning interface defects strongly suggest that FSF is essential when the front surface is not passivated perfectly. Without FSF, the IBC-HJ solar cells may become more sensitive to interface defect density.</description><subject>Alliances</subject><subject>Aluminum</subject><subject>Amorphous silicon</subject><subject>Computer simulation</subject><subject>Defects</subject><subject>Doping</subject><subject>Electric fields</subject><subject>Energy</subject><subject>Energy Systems</subject><subject>front surface field</subject><subject>interdigitated back contact-heterojunction solar cells</subject><subject>Normal distribution</subject><subject>Optimization</subject><subject>Photovoltaic cells</subject><subject>Probability distribution</subject><subject>Research Article</subject><subject>Silicon</subject><subject>Silicon wafers</subject><subject>Simulation</subject><subject>simulations</subject><subject>Solar cells</subject><subject>Solar 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of using amorphous silicon stack as front heterojunction structure on performance of interdigitated back contact-heterojunction solar cell (IBC-HJ)</title><author>JIA, Rui ; TAO, Ke ; LI, Qiang ; DAI, Xiaowan ; SUN, Hengchao ; SUN, Yun ; JIN, Zhi ; LIU, Xinyu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c497t-86bfe9a082c659d2ccd90586612c334cb435ae250fb4a3e8c4ace859cea3d6cd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Alliances</topic><topic>Aluminum</topic><topic>Amorphous silicon</topic><topic>Computer simulation</topic><topic>Defects</topic><topic>Doping</topic><topic>Electric fields</topic><topic>Energy</topic><topic>Energy Systems</topic><topic>front surface field</topic><topic>interdigitated back contact-heterojunction solar cells</topic><topic>Normal distribution</topic><topic>Optimization</topic><topic>Photovoltaic cells</topic><topic>Probability 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Collection</collection><collection>Environmental Science Collection</collection><collection>ABI/INFORM Collection China</collection><collection>ProQuest Central Basic</collection><collection>Environment Abstracts</collection><jtitle>Frontiers in Energy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>JIA, Rui</au><au>TAO, Ke</au><au>LI, Qiang</au><au>DAI, Xiaowan</au><au>SUN, Hengchao</au><au>SUN, Yun</au><au>JIN, Zhi</au><au>LIU, Xinyu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of using amorphous silicon stack as front heterojunction structure on performance of interdigitated back contact-heterojunction solar cell (IBC-HJ)</atitle><jtitle>Frontiers in Energy</jtitle><stitle>Front. Energy</stitle><date>2017-03-01</date><risdate>2017</risdate><volume>11</volume><issue>1</issue><spage>96</spage><epage>104</epage><pages>96-104</pages><issn>2095-1701</issn><eissn>2095-1698</eissn><abstract>Interdigitated back contact-heterojunction (IBC-HJ) solar cells can have a conversion efficiency of over 25%. However, the front surface passivation and structure have a great influence on the properties of the IBC-HJ solar cell. In this paper, detailed numerical simulations have been performed to investigate the potential of front surface field (FSF) offered by stack of n-type doped and intrinsic amorphous silicon (a-Si) layers on the front surface of IBC-HJ solar cells. Simulations results clearly indicate that the electric field of FSF should be strong enough to repel minority carries and cumulate major carriers near the front surface. However, the over-strong electric field tends to drive electrons into a-Si layer, leading to severe recombination loss. The n-type doped amorphous silicon (n-a-Si) layer has been optimized in terms of doping level and thickness. The optimized intrinsic amorphous silicon (i-a-Si) layer should be as thin as possible with an energy band gap ( E g) larger than 1.4 eV. In addition, the simulations concerning interface defects strongly suggest that FSF is essential when the front surface is not passivated perfectly. Without FSF, the IBC-HJ solar cells may become more sensitive to interface defect density.</abstract><cop>Beijing</cop><pub>Higher Education Press</pub><doi>10.1007/s11708-016-0434-6</doi><tpages>9</tpages></addata></record> |
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| subjects | Alliances Aluminum Amorphous silicon Computer simulation Defects Doping Electric fields Energy Energy Systems front surface field interdigitated back contact-heterojunction solar cells Normal distribution Optimization Photovoltaic cells Probability distribution Research Article Silicon Silicon wafers Simulation simulations Solar cells Solar energy Stacks Studies Sun |
| title | Influence of using amorphous silicon stack as front heterojunction structure on performance of interdigitated back contact-heterojunction solar cell (IBC-HJ) |
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