Thermoelectric properties of p-type polycrystalline SnSe doped with Ag
Many IV-VI semiconductors tend to be good thermoelectric materials, these include all Pb chalcogenides as well as Pb-free SnTe: all of which crystallize in a NaCl cubic structure. Another group of IV-VI compounds form layered orthorhombic structures. SnSe is one of these compounds, whose transport p...
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Veröffentlicht in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2014-07, Vol.2 (29), p.11171-11176 |
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creator | Chen, Cheng-Lung Wang, Heng Chen, Yang-Yuan Day, Tristan Snyder, GJeffrey |
description | Many IV-VI semiconductors tend to be good thermoelectric materials, these include all Pb chalcogenides as well as Pb-free SnTe: all of which crystallize in a NaCl cubic structure. Another group of IV-VI compounds form layered orthorhombic structures. SnSe is one of these compounds, whose transport properties as a polycrystalline thermoelectric material have rarely been studied. Here we present our study of p-type polycrystalline SnSe doped with Ag, prepared by melting and hot pressing. SnSe has anisotropic properties with hysteresis observed in resistivity between 300 and 650 K regardless of doping. Ag is not an ideal dopant but is able to increase the carrier density significantly, as a result a peak zT of 0.6 was observed at 750 K. Transport properties of doped SnSe can be explained with a single parabolic band model, which suggests promising potential for this compound together with its challenges. |
doi_str_mv | 10.1039/c4ta01643b |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1864543683</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1846415573</sourcerecordid><originalsourceid>FETCH-LOGICAL-c374t-650909c182a7fb963164b7c88e7472a33140906741db036d6c3f8e18158a2ffd3</originalsourceid><addsrcrecordid>eNqN0M9LwzAUB_AgCo65i39BjiJUkybNj-McToWBh9VzSdMXV8nammRI_3s7J559l_cOHx5fvghdU3JHCdP3lidDqOCsPkOznBQkk1yL879bqUu0iPGDTKMIEVrP0LrcQdj34MGm0Fo8hH6AkFqIuHd4yNI4AB56P9owxmS8bzvA224LuJlgg7_atMPL9yt04YyPsPjdc_S2fixXz9nm9elltdxklkmeMlEQTbSlKjfS1VqwKW0trVIgucwNY5RPQEhOm5ow0QjLnAKqaKFM7lzD5ujm9HfK-XmAmKp9Gy14bzroD7GiSvCCM6HYPygXnBaFPNLbE7WhjzGAq4bQ7k0YK0qqY7XVipfLn2of2DeDVWni</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1846415573</pqid></control><display><type>article</type><title>Thermoelectric properties of p-type polycrystalline SnSe doped with Ag</title><source>Royal Society Of Chemistry Journals 2008-</source><source>Alma/SFX Local Collection</source><creator>Chen, Cheng-Lung ; Wang, Heng ; Chen, Yang-Yuan ; Day, Tristan ; Snyder, GJeffrey</creator><creatorcontrib>Chen, Cheng-Lung ; Wang, Heng ; Chen, Yang-Yuan ; Day, Tristan ; Snyder, GJeffrey</creatorcontrib><description>Many IV-VI semiconductors tend to be good thermoelectric materials, these include all Pb chalcogenides as well as Pb-free SnTe: all of which crystallize in a NaCl cubic structure. Another group of IV-VI compounds form layered orthorhombic structures. SnSe is one of these compounds, whose transport properties as a polycrystalline thermoelectric material have rarely been studied. Here we present our study of p-type polycrystalline SnSe doped with Ag, prepared by melting and hot pressing. SnSe has anisotropic properties with hysteresis observed in resistivity between 300 and 650 K regardless of doping. Ag is not an ideal dopant but is able to increase the carrier density significantly, as a result a peak zT of 0.6 was observed at 750 K. Transport properties of doped SnSe can be explained with a single parabolic band model, which suggests promising potential for this compound together with its challenges.</description><identifier>ISSN: 2050-7488</identifier><identifier>EISSN: 2050-7496</identifier><identifier>DOI: 10.1039/c4ta01643b</identifier><language>eng</language><subject>Chalcogenides ; Electrical resistivity ; Hot pressing ; Melting ; Semiconductors ; Thermoelectric materials ; Thermoelectricity ; Transport properties</subject><ispartof>Journal of materials chemistry. A, Materials for energy and sustainability, 2014-07, Vol.2 (29), p.11171-11176</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c374t-650909c182a7fb963164b7c88e7472a33140906741db036d6c3f8e18158a2ffd3</citedby><cites>FETCH-LOGICAL-c374t-650909c182a7fb963164b7c88e7472a33140906741db036d6c3f8e18158a2ffd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Chen, Cheng-Lung</creatorcontrib><creatorcontrib>Wang, Heng</creatorcontrib><creatorcontrib>Chen, Yang-Yuan</creatorcontrib><creatorcontrib>Day, Tristan</creatorcontrib><creatorcontrib>Snyder, GJeffrey</creatorcontrib><title>Thermoelectric properties of p-type polycrystalline SnSe doped with Ag</title><title>Journal of materials chemistry. A, Materials for energy and sustainability</title><description>Many IV-VI semiconductors tend to be good thermoelectric materials, these include all Pb chalcogenides as well as Pb-free SnTe: all of which crystallize in a NaCl cubic structure. Another group of IV-VI compounds form layered orthorhombic structures. SnSe is one of these compounds, whose transport properties as a polycrystalline thermoelectric material have rarely been studied. Here we present our study of p-type polycrystalline SnSe doped with Ag, prepared by melting and hot pressing. SnSe has anisotropic properties with hysteresis observed in resistivity between 300 and 650 K regardless of doping. Ag is not an ideal dopant but is able to increase the carrier density significantly, as a result a peak zT of 0.6 was observed at 750 K. Transport properties of doped SnSe can be explained with a single parabolic band model, which suggests promising potential for this compound together with its challenges.</description><subject>Chalcogenides</subject><subject>Electrical resistivity</subject><subject>Hot pressing</subject><subject>Melting</subject><subject>Semiconductors</subject><subject>Thermoelectric materials</subject><subject>Thermoelectricity</subject><subject>Transport properties</subject><issn>2050-7488</issn><issn>2050-7496</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqN0M9LwzAUB_AgCo65i39BjiJUkybNj-McToWBh9VzSdMXV8nammRI_3s7J559l_cOHx5fvghdU3JHCdP3lidDqOCsPkOznBQkk1yL879bqUu0iPGDTKMIEVrP0LrcQdj34MGm0Fo8hH6AkFqIuHd4yNI4AB56P9owxmS8bzvA224LuJlgg7_atMPL9yt04YyPsPjdc_S2fixXz9nm9elltdxklkmeMlEQTbSlKjfS1VqwKW0trVIgucwNY5RPQEhOm5ow0QjLnAKqaKFM7lzD5ujm9HfK-XmAmKp9Gy14bzroD7GiSvCCM6HYPygXnBaFPNLbE7WhjzGAq4bQ7k0YK0qqY7XVipfLn2of2DeDVWni</recordid><startdate>20140701</startdate><enddate>20140701</enddate><creator>Chen, Cheng-Lung</creator><creator>Wang, Heng</creator><creator>Chen, Yang-Yuan</creator><creator>Day, Tristan</creator><creator>Snyder, GJeffrey</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7ST</scope><scope>C1K</scope><scope>SOI</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140701</creationdate><title>Thermoelectric properties of p-type polycrystalline SnSe doped with Ag</title><author>Chen, Cheng-Lung ; Wang, Heng ; Chen, Yang-Yuan ; Day, Tristan ; Snyder, GJeffrey</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c374t-650909c182a7fb963164b7c88e7472a33140906741db036d6c3f8e18158a2ffd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Chalcogenides</topic><topic>Electrical resistivity</topic><topic>Hot pressing</topic><topic>Melting</topic><topic>Semiconductors</topic><topic>Thermoelectric materials</topic><topic>Thermoelectricity</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Cheng-Lung</creatorcontrib><creatorcontrib>Wang, Heng</creatorcontrib><creatorcontrib>Chen, Yang-Yuan</creatorcontrib><creatorcontrib>Day, Tristan</creatorcontrib><creatorcontrib>Snyder, GJeffrey</creatorcontrib><collection>CrossRef</collection><collection>Environment Abstracts</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Environment Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials chemistry. A, Materials for energy and sustainability</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Cheng-Lung</au><au>Wang, Heng</au><au>Chen, Yang-Yuan</au><au>Day, Tristan</au><au>Snyder, GJeffrey</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermoelectric properties of p-type polycrystalline SnSe doped with Ag</atitle><jtitle>Journal of materials chemistry. A, Materials for energy and sustainability</jtitle><date>2014-07-01</date><risdate>2014</risdate><volume>2</volume><issue>29</issue><spage>11171</spage><epage>11176</epage><pages>11171-11176</pages><issn>2050-7488</issn><eissn>2050-7496</eissn><abstract>Many IV-VI semiconductors tend to be good thermoelectric materials, these include all Pb chalcogenides as well as Pb-free SnTe: all of which crystallize in a NaCl cubic structure. Another group of IV-VI compounds form layered orthorhombic structures. SnSe is one of these compounds, whose transport properties as a polycrystalline thermoelectric material have rarely been studied. Here we present our study of p-type polycrystalline SnSe doped with Ag, prepared by melting and hot pressing. SnSe has anisotropic properties with hysteresis observed in resistivity between 300 and 650 K regardless of doping. Ag is not an ideal dopant but is able to increase the carrier density significantly, as a result a peak zT of 0.6 was observed at 750 K. Transport properties of doped SnSe can be explained with a single parabolic band model, which suggests promising potential for this compound together with its challenges.</abstract><doi>10.1039/c4ta01643b</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
subjects | Chalcogenides Electrical resistivity Hot pressing Melting Semiconductors Thermoelectric materials Thermoelectricity Transport properties |
title | Thermoelectric properties of p-type polycrystalline SnSe doped with Ag |
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