Effect of carrier screening on ZnO-based resistive switching memory devices
The carrier screening effect occurs commonly in dielectric materials. It reduces the electric potential gradient, thus negatively affecting the functionality of resistive random access memory （RRAM） devices. An Au/ZnO film/Al-doped ZnO device fabricated in this work exhibited no resistive switching...
Gespeichert in:
| Veröffentlicht in: | Nano research 2017, Vol.10 (1), p.77-86 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 86 |
|---|---|
| container_issue | 1 |
| container_start_page | 77 |
| container_title | Nano research |
| container_volume | 10 |
| creator | Sun, Yihui Yan, Xiaoqin Zheng, Xin Li, Yong Liu, Yichong Shen, Yanwei Ding, Yi Zhang, Yue |
| description | The carrier screening effect occurs commonly in dielectric materials. It reduces the electric potential gradient, thus negatively affecting the functionality of resistive random access memory （RRAM） devices. An Au/ZnO film/Al-doped ZnO device fabricated in this work exhibited no resistive switching （RS）, which was attributed to the carrier screening effect. Therefore, annealing was used for alleviating the screening effect, significantly enhancing the RS property. In addition, different on/off ratios were obtained for various bias values, and the screening effect was accounted for by investigating electron transport mechanisms. Furthermore, different annealing temperatures were employed to modulate the free carrier concentration in ZnO films to alleviate the screening effect. The maximal on/off ratio reached 10s at an annealing temperature of 600 ℃, yielding the lowest number of free carriers and the weakest screening effect in ZnO films. This work investigates the screening effect in RS devices. The screening effect not only modulates the characteristics of memory devices but also provides insight into the mechanism of RS in these devices. |
| doi_str_mv | 10.1007/s12274-016-1267-7 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1864542035</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>670976773</cqvip_id><sourcerecordid>2001476249</sourcerecordid><originalsourceid>FETCH-LOGICAL-c409t-e79d73ffdde15cc9236a59b79eae588d7bcef81b13c82f9b1d3c5ddd11f4ab1f3</originalsourceid><addsrcrecordid>eNqNkT9PwzAQxSMEEqXwAdgiWFgCPtux4xFV5Y-o1AUWFiuxz22qJmnttKjfnlQpIDEgbrkbfu89nV4UXQK5BULkXQBKJU8IiASokIk8igagVJaQbo6_bqD8NDoLYUGIoMCzQfQydg5NGzcuNrn3Jfo4GI9Yl_Usbur4vZ4mRR7Qxh5DGdpyi3H4KFsz3wMVVo3fxRa3pcFwHp24fBnw4rCH0dvD-HX0lEymj8-j-0liOFFtglJZyZyzFiE1RlEm8lQVUmGOaZZZWRh0GRTATEadKsAyk1prARzPC3BsGN30vivfrDcYWl2VweBymdfYbIKGTPCUU8LSf6BpSjJCOevQ61_ootn4untEU0KAS0G56ijoKeObEDw6vfJllfudBqL3Tei-Cd01ofdNaNlpaK8JHVvP0P84_yW6OgTNm3q27nTfSUISJYWUjH0CuSeW4A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2001476249</pqid></control><display><type>article</type><title>Effect of carrier screening on ZnO-based resistive switching memory devices</title><source>Springer Nature - Complete Springer Journals</source><creator>Sun, Yihui ; Yan, Xiaoqin ; Zheng, Xin ; Li, Yong ; Liu, Yichong ; Shen, Yanwei ; Ding, Yi ; Zhang, Yue</creator><creatorcontrib>Sun, Yihui ; Yan, Xiaoqin ; Zheng, Xin ; Li, Yong ; Liu, Yichong ; Shen, Yanwei ; Ding, Yi ; Zhang, Yue</creatorcontrib><description>The carrier screening effect occurs commonly in dielectric materials. It reduces the electric potential gradient, thus negatively affecting the functionality of resistive random access memory （RRAM） devices. An Au/ZnO film/Al-doped ZnO device fabricated in this work exhibited no resistive switching （RS）, which was attributed to the carrier screening effect. Therefore, annealing was used for alleviating the screening effect, significantly enhancing the RS property. In addition, different on/off ratios were obtained for various bias values, and the screening effect was accounted for by investigating electron transport mechanisms. Furthermore, different annealing temperatures were employed to modulate the free carrier concentration in ZnO films to alleviate the screening effect. The maximal on/off ratio reached 10s at an annealing temperature of 600 ℃, yielding the lowest number of free carriers and the weakest screening effect in ZnO films. This work investigates the screening effect in RS devices. The screening effect not only modulates the characteristics of memory devices but also provides insight into the mechanism of RS in these devices.</description><identifier>ISSN: 1998-0124</identifier><identifier>EISSN: 1998-0000</identifier><identifier>DOI: 10.1007/s12274-016-1267-7</identifier><language>eng</language><publisher>Beijing: Tsinghua University Press</publisher><subject>Annealing ; Atomic/Molecular Structure and Spectra ; Biomedicine ; Biotechnology ; Carrier density ; Carriers ; Chemistry and Materials Science ; Condensed Matter Physics ; Data storage ; Devices ; Dielectrics ; Electric potential ; Electron transport ; Genetic screening ; Insulators ; Materials Science ; Memory devices ; Nanotechnology ; Random access memory ; Research Article ; Screening ; Switching ; Zinc oxide</subject><ispartof>Nano research, 2017, Vol.10 (1), p.77-86</ispartof><rights>Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2017</rights><rights>Nano Research is a copyright of Springer, (2017). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c409t-e79d73ffdde15cc9236a59b79eae588d7bcef81b13c82f9b1d3c5ddd11f4ab1f3</citedby><cites>FETCH-LOGICAL-c409t-e79d73ffdde15cc9236a59b79eae588d7bcef81b13c82f9b1d3c5ddd11f4ab1f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/71233X/71233X.jpg</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12274-016-1267-7$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s12274-016-1267-7$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,4010,27900,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Sun, Yihui</creatorcontrib><creatorcontrib>Yan, Xiaoqin</creatorcontrib><creatorcontrib>Zheng, Xin</creatorcontrib><creatorcontrib>Li, Yong</creatorcontrib><creatorcontrib>Liu, Yichong</creatorcontrib><creatorcontrib>Shen, Yanwei</creatorcontrib><creatorcontrib>Ding, Yi</creatorcontrib><creatorcontrib>Zhang, Yue</creatorcontrib><title>Effect of carrier screening on ZnO-based resistive switching memory devices</title><title>Nano research</title><addtitle>Nano Res</addtitle><addtitle>Nano Research</addtitle><description>The carrier screening effect occurs commonly in dielectric materials. It reduces the electric potential gradient, thus negatively affecting the functionality of resistive random access memory （RRAM） devices. An Au/ZnO film/Al-doped ZnO device fabricated in this work exhibited no resistive switching （RS）, which was attributed to the carrier screening effect. Therefore, annealing was used for alleviating the screening effect, significantly enhancing the RS property. In addition, different on/off ratios were obtained for various bias values, and the screening effect was accounted for by investigating electron transport mechanisms. Furthermore, different annealing temperatures were employed to modulate the free carrier concentration in ZnO films to alleviate the screening effect. The maximal on/off ratio reached 10s at an annealing temperature of 600 ℃, yielding the lowest number of free carriers and the weakest screening effect in ZnO films. This work investigates the screening effect in RS devices. The screening effect not only modulates the characteristics of memory devices but also provides insight into the mechanism of RS in these devices.</description><subject>Annealing</subject><subject>Atomic/Molecular Structure and Spectra</subject><subject>Biomedicine</subject><subject>Biotechnology</subject><subject>Carrier density</subject><subject>Carriers</subject><subject>Chemistry and Materials Science</subject><subject>Condensed Matter Physics</subject><subject>Data storage</subject><subject>Devices</subject><subject>Dielectrics</subject><subject>Electric potential</subject><subject>Electron transport</subject><subject>Genetic screening</subject><subject>Insulators</subject><subject>Materials Science</subject><subject>Memory devices</subject><subject>Nanotechnology</subject><subject>Random access memory</subject><subject>Research Article</subject><subject>Screening</subject><subject>Switching</subject><subject>Zinc oxide</subject><issn>1998-0124</issn><issn>1998-0000</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNqNkT9PwzAQxSMEEqXwAdgiWFgCPtux4xFV5Y-o1AUWFiuxz22qJmnttKjfnlQpIDEgbrkbfu89nV4UXQK5BULkXQBKJU8IiASokIk8igagVJaQbo6_bqD8NDoLYUGIoMCzQfQydg5NGzcuNrn3Jfo4GI9Yl_Usbur4vZ4mRR7Qxh5DGdpyi3H4KFsz3wMVVo3fxRa3pcFwHp24fBnw4rCH0dvD-HX0lEymj8-j-0liOFFtglJZyZyzFiE1RlEm8lQVUmGOaZZZWRh0GRTATEadKsAyk1prARzPC3BsGN30vivfrDcYWl2VweBymdfYbIKGTPCUU8LSf6BpSjJCOevQ61_ootn4untEU0KAS0G56ijoKeObEDw6vfJllfudBqL3Tei-Cd01ofdNaNlpaK8JHVvP0P84_yW6OgTNm3q27nTfSUISJYWUjH0CuSeW4A</recordid><startdate>2017</startdate><enddate>2017</enddate><creator>Sun, Yihui</creator><creator>Yan, Xiaoqin</creator><creator>Zheng, Xin</creator><creator>Li, Yong</creator><creator>Liu, Yichong</creator><creator>Shen, Yanwei</creator><creator>Ding, Yi</creator><creator>Zhang, Yue</creator><general>Tsinghua University Press</general><general>Springer Nature B.V</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7QF</scope><scope>7QO</scope><scope>7QQ</scope><scope>7SE</scope><scope>7SR</scope><scope>7U5</scope><scope>7X7</scope><scope>7XB</scope><scope>8AO</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FH</scope><scope>8FI</scope><scope>8FJ</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AEUYN</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BBNVY</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>BHPHI</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>FR3</scope><scope>FYUFA</scope><scope>GHDGH</scope><scope>GNUQQ</scope><scope>H8G</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>K9.</scope><scope>KB.</scope><scope>L7M</scope><scope>LK8</scope><scope>M0S</scope><scope>M7P</scope><scope>P64</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope></search><sort><creationdate>2017</creationdate><title>Effect of carrier screening on ZnO-based resistive switching memory devices</title><author>Sun, Yihui ; Yan, Xiaoqin ; Zheng, Xin ; Li, Yong ; Liu, Yichong ; Shen, Yanwei ; Ding, Yi ; Zhang, Yue</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c409t-e79d73ffdde15cc9236a59b79eae588d7bcef81b13c82f9b1d3c5ddd11f4ab1f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Annealing</topic><topic>Atomic/Molecular Structure and Spectra</topic><topic>Biomedicine</topic><topic>Biotechnology</topic><topic>Carrier density</topic><topic>Carriers</topic><topic>Chemistry and Materials Science</topic><topic>Condensed Matter Physics</topic><topic>Data storage</topic><topic>Devices</topic><topic>Dielectrics</topic><topic>Electric potential</topic><topic>Electron transport</topic><topic>Genetic screening</topic><topic>Insulators</topic><topic>Materials Science</topic><topic>Memory devices</topic><topic>Nanotechnology</topic><topic>Random access memory</topic><topic>Research Article</topic><topic>Screening</topic><topic>Switching</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sun, Yihui</creatorcontrib><creatorcontrib>Yan, Xiaoqin</creatorcontrib><creatorcontrib>Zheng, Xin</creatorcontrib><creatorcontrib>Li, Yong</creatorcontrib><creatorcontrib>Liu, Yichong</creatorcontrib><creatorcontrib>Shen, Yanwei</creatorcontrib><creatorcontrib>Ding, Yi</creatorcontrib><creatorcontrib>Zhang, Yue</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>Aluminium Industry Abstracts</collection><collection>Biotechnology Research Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Health & Medical Collection</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>ProQuest Pharma Collection</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Natural Science Collection</collection><collection>Hospital Premium Collection</collection><collection>Hospital Premium Collection (Alumni Edition)</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest One Sustainability</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>Biological Science Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>Natural Science Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>Engineering Research Database</collection><collection>Health Research Premium Collection</collection><collection>Health Research Premium Collection (Alumni)</collection><collection>ProQuest Central Student</collection><collection>Copper Technical Reference Library</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>ProQuest Health & Medical Complete (Alumni)</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ProQuest Biological Science Collection</collection><collection>Health & Medical Collection (Alumni Edition)</collection><collection>Biological Science Database</collection><collection>Biotechnology and BioEngineering Abstracts</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><jtitle>Nano research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sun, Yihui</au><au>Yan, Xiaoqin</au><au>Zheng, Xin</au><au>Li, Yong</au><au>Liu, Yichong</au><au>Shen, Yanwei</au><au>Ding, Yi</au><au>Zhang, Yue</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of carrier screening on ZnO-based resistive switching memory devices</atitle><jtitle>Nano research</jtitle><stitle>Nano Res</stitle><addtitle>Nano Research</addtitle><date>2017</date><risdate>2017</risdate><volume>10</volume><issue>1</issue><spage>77</spage><epage>86</epage><pages>77-86</pages><issn>1998-0124</issn><eissn>1998-0000</eissn><abstract>The carrier screening effect occurs commonly in dielectric materials. It reduces the electric potential gradient, thus negatively affecting the functionality of resistive random access memory （RRAM） devices. An Au/ZnO film/Al-doped ZnO device fabricated in this work exhibited no resistive switching （RS）, which was attributed to the carrier screening effect. Therefore, annealing was used for alleviating the screening effect, significantly enhancing the RS property. In addition, different on/off ratios were obtained for various bias values, and the screening effect was accounted for by investigating electron transport mechanisms. Furthermore, different annealing temperatures were employed to modulate the free carrier concentration in ZnO films to alleviate the screening effect. The maximal on/off ratio reached 10s at an annealing temperature of 600 ℃, yielding the lowest number of free carriers and the weakest screening effect in ZnO films. This work investigates the screening effect in RS devices. The screening effect not only modulates the characteristics of memory devices but also provides insight into the mechanism of RS in these devices.</abstract><cop>Beijing</cop><pub>Tsinghua University Press</pub><doi>10.1007/s12274-016-1267-7</doi><tpages>10</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1998-0124 |
| ispartof | Nano research, 2017, Vol.10 (1), p.77-86 |
| issn | 1998-0124 1998-0000 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1864542035 |
| source | Springer Nature - Complete Springer Journals |
| subjects | Annealing Atomic/Molecular Structure and Spectra Biomedicine Biotechnology Carrier density Carriers Chemistry and Materials Science Condensed Matter Physics Data storage Devices Dielectrics Electric potential Electron transport Genetic screening Insulators Materials Science Memory devices Nanotechnology Random access memory Research Article Screening Switching Zinc oxide |
| title | Effect of carrier screening on ZnO-based resistive switching memory devices |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T18%3A33%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20carrier%20screening%20on%20ZnO-based%20resistive%20switching%20memory%20devices&rft.jtitle=Nano%20research&rft.au=Sun,%20Yihui&rft.date=2017&rft.volume=10&rft.issue=1&rft.spage=77&rft.epage=86&rft.pages=77-86&rft.issn=1998-0124&rft.eissn=1998-0000&rft_id=info:doi/10.1007/s12274-016-1267-7&rft_dat=%3Cproquest_cross%3E2001476249%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2001476249&rft_id=info:pmid/&rft_cqvip_id=670976773&rfr_iscdi=true |