Characteristics of metal-gate metal-insulator-semiconductor capacitor with ZrN capping layer fabricated by high-power impulse magnetron sputtering

Metal-gate Al/TiN/ZrN/ZrO2/p-Si metal-insulator-semiconductor structures were fabricated. Epitaxial crystallization of a high-k ZrO2 thin-film was induced by conventional direct current magnetron sputtering (DCMS) or high-power impulse magnetron sputtering (HIPIMS) to enable the subsequent depositio...

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Veröffentlicht in:	Thin solid films 2016-11, Vol.618, p.55-59
Hauptverfasser:	Tsai, Jung-Ruey, Juan, Pi-Chun, Chen, Po-Jen
Format:	Artikel
Sprache:	eng
Schlagworte:	Deposition Energy density High-k dielectrics High-power impulse magnetron sputtering HIPIMS Hysteresis Magnetron sputtering Metal-gate MIS capacitor Surface layer Texture Thin films Zirconium dioxide ZrN ZrO2
Online-Zugang:	Volltext
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