Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

High-quality thin insulating films on graphene (Gr) are essential for field-effect transistors (FETs) and other electronics applications of this material. Atomic layer deposition (ALD) is the method of choice to deposit high-κ dielectrics with excellent thickness uniformity and conformal coverage. H...

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Veröffentlicht in:	ACS applied materials & interfaces 2017-03, Vol.9 (8), p.7761-7771
Hauptverfasser:	Fisichella, Gabriele, Schilirò, Emanuela, Di Franco, Salvatore, Fiorenza, Patrick, Lo Nigro, Raffaella, Roccaforte, Fabrizio, Ravesi, Sebastiano, Giannazzo, Filippo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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