Enhanced Physical Properties in a Pentacene Polymorph

Enhanced Physical Properties in a Pentacene Polymorph

A low temperature mobility up to 10 000 cm2 V−1 s−1 at 1.7 K was observed for a new polymorphic form of pentacene (C22H14, see picture). Optical measurements show a band gap of the order of 2 eV, and transport measurements revealed a mobility above 3 cm2 V−1 s−1 at room temperature....

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Veröffentlicht in:Angewandte Chemie International Edition 2001-05, Vol.40 (9), p.1732-1736
Hauptverfasser: Siegrist, Theo, Kloc, Christian, Schön, Jan H., Batlogg, Bertram, Haddon, Robert C., Berg, Steffen, Thomas, Gordon A.
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arenes
crystal growth
polymorphism
semiconductors
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container_end_page 1736
container_issue 9
container_start_page 1732
container_title Angewandte Chemie International Edition
container_volume 40
creator Siegrist, Theo
Kloc, Christian
Schön, Jan H.
Batlogg, Bertram
Haddon, Robert C.
Berg, Steffen
Thomas, Gordon A.
description A low temperature mobility up to 10 000 cm2 V−1 s−1 at 1.7 K was observed for a new polymorphic form of pentacene (C22H14, see picture). Optical measurements show a band gap of the order of 2 eV, and transport measurements revealed a mobility above 3 cm2 V−1 s−1 at room temperature.
doi_str_mv 10.1002/1521-3773(20010504)40:9<1732::AID-ANIE17320>3.0.CO;2-7
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1859350514</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1859350514</sourcerecordid><originalsourceid>FETCH-LOGICAL-c4110-a421dcf141bdf9bb35c2a0161e5a0072b80dae6d07b15d945ae30ac4edcba0053</originalsourceid><addsrcrecordid>eNqVkFFv0zAQxy0EYqPwFVAex0PKXWzXSUGTSteVStPaB2ATQjo5zlUNpElntxr99iRq6Z544Mn26e_f3f2EuEToI0DyHnWCsTRGXiQACBrUOwXD7CMamQyHo9lVPLqdTboXXMo-9MfzD0lsnonz08fn7V1JGZtU45l4FcLPlpumMHgpzhCllipT50JP6pWtHRfRYrUPpbNVtPDNhv225BCVdWSjBddb67jmaNFU-3XjN6vX4sXSVoHfHM-e-Ho9-TL-HN_Mp7Px6CZ2ChFiqxIs3BIV5sUyy3OpXWIBB8jaApgkT6GwPCjA5KiLTGnLEqxTXLi8DWjZExcH7sY3DzsOW1qXwXFV2ZqbXSBMdSY16HbRnvh2iDrfhOB5SRtfrq3fEwJ1SqkzQ50Z-quUFFBGnUSiVimdlJIkoPGcEjIt-O1xhl2-5uIJe3TYBn4cAo9lxfv_a_uvrk_FFh8f8GXY8u8T3vpfNDDSaLq7ndL1vUq_300_0b38AyNTnvE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1859350514</pqid></control><display><type>article</type><title>Enhanced Physical Properties in a Pentacene Polymorph</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Siegrist, Theo ; Kloc, Christian ; Schön, Jan H. ; Batlogg, Bertram ; Haddon, Robert C. ; Berg, Steffen ; Thomas, Gordon A.</creator><creatorcontrib>Siegrist, Theo ; Kloc, Christian ; Schön, Jan H. ; Batlogg, Bertram ; Haddon, Robert C. ; Berg, Steffen ; Thomas, Gordon A.</creatorcontrib><description>A low temperature mobility up to 10 000 cm2 V−1 s−1 at 1.7 K was observed for a new polymorphic form of pentacene (C22H14, see picture). Optical measurements show a band gap of the order of 2 eV, and transport measurements revealed a mobility above 3 cm2 V−1 s−1 at room temperature.</description><identifier>ISSN: 1433-7851</identifier><identifier>EISSN: 1521-3773</identifier><identifier>DOI: 10.1002/1521-3773(20010504)40:9&lt;1732::AID-ANIE17320&gt;3.0.CO;2-7</identifier><identifier>PMID: 11353494</identifier><language>eng</language><publisher>Weinheim: WILEY-VCH Verlag GmbH</publisher><subject>arenes ; crystal growth ; polymorphism ; semiconductors</subject><ispartof>Angewandte Chemie International Edition, 2001-05, Vol.40 (9), p.1732-1736</ispartof><rights>Copyright © 2001 WILEY‐VCH Verlag GmbH, Weinheim, Fed. Rep. of Germany</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c4110-a421dcf141bdf9bb35c2a0161e5a0072b80dae6d07b15d945ae30ac4edcba0053</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2F1521-3773%2820010504%2940%3A9%3C1732%3A%3AAID-ANIE17320%3E3.0.CO%3B2-7$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2F1521-3773%2820010504%2940%3A9%3C1732%3A%3AAID-ANIE17320%3E3.0.CO%3B2-7$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27903,27904,45553,45554</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/11353494$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Siegrist, Theo</creatorcontrib><creatorcontrib>Kloc, Christian</creatorcontrib><creatorcontrib>Schön, Jan H.</creatorcontrib><creatorcontrib>Batlogg, Bertram</creatorcontrib><creatorcontrib>Haddon, Robert C.</creatorcontrib><creatorcontrib>Berg, Steffen</creatorcontrib><creatorcontrib>Thomas, Gordon A.</creatorcontrib><title>Enhanced Physical Properties in a Pentacene Polymorph</title><title>Angewandte Chemie International Edition</title><addtitle>Angew. Chem. Int. Ed</addtitle><description>A low temperature mobility up to 10 000 cm2 V−1 s−1 at 1.7 K was observed for a new polymorphic form of pentacene (C22H14, see picture). Optical measurements show a band gap of the order of 2 eV, and transport measurements revealed a mobility above 3 cm2 V−1 s−1 at room temperature.</description><subject>arenes</subject><subject>crystal growth</subject><subject>polymorphism</subject><subject>semiconductors</subject><issn>1433-7851</issn><issn>1521-3773</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNqVkFFv0zAQxy0EYqPwFVAex0PKXWzXSUGTSteVStPaB2ATQjo5zlUNpElntxr99iRq6Z544Mn26e_f3f2EuEToI0DyHnWCsTRGXiQACBrUOwXD7CMamQyHo9lVPLqdTboXXMo-9MfzD0lsnonz08fn7V1JGZtU45l4FcLPlpumMHgpzhCllipT50JP6pWtHRfRYrUPpbNVtPDNhv225BCVdWSjBddb67jmaNFU-3XjN6vX4sXSVoHfHM-e-Ho9-TL-HN_Mp7Px6CZ2ChFiqxIs3BIV5sUyy3OpXWIBB8jaApgkT6GwPCjA5KiLTGnLEqxTXLi8DWjZExcH7sY3DzsOW1qXwXFV2ZqbXSBMdSY16HbRnvh2iDrfhOB5SRtfrq3fEwJ1SqkzQ50Z-quUFFBGnUSiVimdlJIkoPGcEjIt-O1xhl2-5uIJe3TYBn4cAo9lxfv_a_uvrk_FFh8f8GXY8u8T3vpfNDDSaLq7ndL1vUq_300_0b38AyNTnvE</recordid><startdate>20010504</startdate><enddate>20010504</enddate><creator>Siegrist, Theo</creator><creator>Kloc, Christian</creator><creator>Schön, Jan H.</creator><creator>Batlogg, Bertram</creator><creator>Haddon, Robert C.</creator><creator>Berg, Steffen</creator><creator>Thomas, Gordon A.</creator><general>WILEY-VCH Verlag GmbH</general><general>WILEY‐VCH Verlag GmbH</general><scope>BSCLL</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20010504</creationdate><title>Enhanced Physical Properties in a Pentacene Polymorph</title><author>Siegrist, Theo ; Kloc, Christian ; Schön, Jan H. ; Batlogg, Bertram ; Haddon, Robert C. ; Berg, Steffen ; Thomas, Gordon A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4110-a421dcf141bdf9bb35c2a0161e5a0072b80dae6d07b15d945ae30ac4edcba0053</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>arenes</topic><topic>crystal growth</topic><topic>polymorphism</topic><topic>semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Siegrist, Theo</creatorcontrib><creatorcontrib>Kloc, Christian</creatorcontrib><creatorcontrib>Schön, Jan H.</creatorcontrib><creatorcontrib>Batlogg, Bertram</creatorcontrib><creatorcontrib>Haddon, Robert C.</creatorcontrib><creatorcontrib>Berg, Steffen</creatorcontrib><creatorcontrib>Thomas, Gordon A.</creatorcontrib><collection>Istex</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Angewandte Chemie International Edition</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Siegrist, Theo</au><au>Kloc, Christian</au><au>Schön, Jan H.</au><au>Batlogg, Bertram</au><au>Haddon, Robert C.</au><au>Berg, Steffen</au><au>Thomas, Gordon A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced Physical Properties in a Pentacene Polymorph</atitle><jtitle>Angewandte Chemie International Edition</jtitle><addtitle>Angew. Chem. Int. Ed</addtitle><date>2001-05-04</date><risdate>2001</risdate><volume>40</volume><issue>9</issue><spage>1732</spage><epage>1736</epage><pages>1732-1736</pages><issn>1433-7851</issn><eissn>1521-3773</eissn><abstract>A low temperature mobility up to 10 000 cm2 V−1 s−1 at 1.7 K was observed for a new polymorphic form of pentacene (C22H14, see picture). Optical measurements show a band gap of the order of 2 eV, and transport measurements revealed a mobility above 3 cm2 V−1 s−1 at room temperature.</abstract><cop>Weinheim</cop><pub>WILEY-VCH Verlag GmbH</pub><pmid>11353494</pmid><doi>10.1002/1521-3773(20010504)40:9&lt;1732::AID-ANIE17320&gt;3.0.CO;2-7</doi><tpages>5</tpages></addata></record>
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source Wiley Online Library Journals Frontfile Complete
subjects arenes
crystal growth
polymorphism
semiconductors
title Enhanced Physical Properties in a Pentacene Polymorph
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T04%3A18%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Enhanced%20Physical%20Properties%20in%20a%20Pentacene%20Polymorph&rft.jtitle=Angewandte%20Chemie%20International%20Edition&rft.au=Siegrist,%20Theo&rft.date=2001-05-04&rft.volume=40&rft.issue=9&rft.spage=1732&rft.epage=1736&rft.pages=1732-1736&rft.issn=1433-7851&rft.eissn=1521-3773&rft_id=info:doi/10.1002/1521-3773(20010504)40:9%3C1732::AID-ANIE17320%3E3.0.CO;2-7&rft_dat=%3Cproquest_cross%3E1859350514%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1859350514&rft_id=info:pmid/11353494&rfr_iscdi=true