Instability-driven SiGe island growth
Three-dimensional islanding is generally assumed to proceed through nucleation and growth. Here we present studies showing the growth of Si1-xGex islands (0.2
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| Veröffentlicht in: | Physical review letters 2000-05, Vol.84 (20), p.4641-4644 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Three-dimensional islanding is generally assumed to proceed through nucleation and growth. Here we present studies showing the growth of Si1-xGex islands (0.2 |
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| ISSN: | 0031-9007 1079-7114 |
| DOI: | 10.1103/PhysRevLett.84.4641 |