Fast diffusion of H and creation of dangling bonds in hydrogenated amorphous silicon studied by in situ ESR
The interaction of atomic hydrogen with a-Si:H films was studied by means of in situ ESR during H plasma treatment. H diffuses into the a-Si:H film and creates additional Si dangling bonds ( approximately 10(13) cm (-2)). We observed a high diffusion coefficient (>10(-10) cm (2) s (-1)) at the ve...
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| Veröffentlicht in: | Physical review letters 2000-09, Vol.85 (11), p.2324-2327 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The interaction of atomic hydrogen with a-Si:H films was studied by means of in situ ESR during H plasma treatment. H diffuses into the a-Si:H film and creates additional Si dangling bonds ( approximately 10(13) cm (-2)). We observed a high diffusion coefficient (>10(-10) cm (2) s (-1)) at the very initial stage of H treatment ( |
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| ISSN: | 0031-9007 1079-7114 |
| DOI: | 10.1103/PhysRevLett.85.2324 |