Photoacoustic investigation of semiconductors: influence of carrier diffusion and recombination in PbTe and Si

Photoacoustic investigation of semiconductors: influence of carrier diffusion and recombination in PbTe and Si

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Veröffentlicht in:Physical review. B, Condensed matter Condensed matter, 1989-08, Vol.40 (6), p.3924-3930
Hauptverfasser: PINTO NETO, A, VARGAS, H, LEITE, N. F, MIRANDA, L. C. M
Format: Artikel
Sprache:eng
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Acoustical properties of solids
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Mechanical and acoustical properties of condensed matter
Physics
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container_end_page 3930
container_issue 6
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container_title Physical review. B, Condensed matter
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creator PINTO NETO, A
VARGAS, H
LEITE, N. F
MIRANDA, L. C. M
description
doi_str_mv 10.1103/physrevb.40.3924
format Article
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ispartof Physical review. B, Condensed matter, 1989-08, Vol.40 (6), p.3924-3930
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source American Physical Society Journals
subjects Acoustical properties of solids
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Mechanical and acoustical properties of condensed matter
Physics
title Photoacoustic investigation of semiconductors: influence of carrier diffusion and recombination in PbTe and Si
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