Electronic transport in Si:P [delta]-doped wires
Abstract Despite the importance of Si:P [delta]-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic transport in a [delta]-doped wire, which is...
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| Veröffentlicht in: | Physical review. B 2015-12, Vol.92 (23) |
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| container_title | Physical review. B |
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| creator | Smith, J S Drumm, D W Budi, A Vaitkus, J A Cole, J H Russo, S P |
| description | Abstract Despite the importance of Si:P [delta]-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic transport in a [delta]-doped wire, which is described by a tight-binding Hamiltonian matrix within a single-band effective-mass approximation. We use this transport model to calculate the current-voltage characteristics of a number of [delta]-doped wires, achieving good agreement with experiment. To motivate our transport model we have performed density-functional calculations for a variety of [delta]-doped wires, each with different donor configurations. These calculations also allow us to accurately define the electronic extent of a [delta]-doped wire, which we find to be at least 4.6 nm. |
| doi_str_mv | 10.1103/PhysRevB.92.235420 |
| format | Article |
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These calculations also allow us to accurately define the electronic extent of a [delta]-doped wire, which we find to be at least 4.6 nm.</description><subject>Approximation</subject><subject>Condensed matter</subject><subject>Donors (electronic)</subject><subject>Electron transport</subject><subject>Mathematical models</subject><subject>Transport</subject><subject>Transportation models</subject><subject>Wire</subject><issn>2469-9950</issn><issn>2469-9969</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqVyr0OAUEUQOGJkBC8gGpKza47-8dVEqLcoBORze4VI2NnzR3E22tErzpfcYQYKQiVgniSX968pecixCiM4jSJoCV6UZJhgJhh--cUumLIfAUAlQFOAXsCVoZK72ytS-ldUXNjnZe6ljs9z-WhIuOLY1DZhir50o54IDrnwjANv-2L8Xq1X26Cxtn7g9ifbppLMqaoyT74pGZpGmOCiPEf6wdtZT_K</recordid><startdate>20151215</startdate><enddate>20151215</enddate><creator>Smith, J S</creator><creator>Drumm, D W</creator><creator>Budi, A</creator><creator>Vaitkus, J A</creator><creator>Cole, J H</creator><creator>Russo, S P</creator><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20151215</creationdate><title>Electronic transport in Si:P [delta]-doped wires</title><author>Smith, J S ; Drumm, D W ; Budi, A ; Vaitkus, J A ; Cole, J H ; Russo, S P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_18553949993</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Approximation</topic><topic>Condensed matter</topic><topic>Donors (electronic)</topic><topic>Electron transport</topic><topic>Mathematical models</topic><topic>Transport</topic><topic>Transportation models</topic><topic>Wire</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Smith, J S</creatorcontrib><creatorcontrib>Drumm, D W</creatorcontrib><creatorcontrib>Budi, A</creatorcontrib><creatorcontrib>Vaitkus, J A</creatorcontrib><creatorcontrib>Cole, J H</creatorcontrib><creatorcontrib>Russo, S P</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physical review. B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Smith, J S</au><au>Drumm, D W</au><au>Budi, A</au><au>Vaitkus, J A</au><au>Cole, J H</au><au>Russo, S P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electronic transport in Si:P [delta]-doped wires</atitle><jtitle>Physical review. B</jtitle><date>2015-12-15</date><risdate>2015</risdate><volume>92</volume><issue>23</issue><issn>2469-9950</issn><eissn>2469-9969</eissn><abstract>Abstract Despite the importance of Si:P [delta]-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic transport in a [delta]-doped wire, which is described by a tight-binding Hamiltonian matrix within a single-band effective-mass approximation. We use this transport model to calculate the current-voltage characteristics of a number of [delta]-doped wires, achieving good agreement with experiment. To motivate our transport model we have performed density-functional calculations for a variety of [delta]-doped wires, each with different donor configurations. These calculations also allow us to accurately define the electronic extent of a [delta]-doped wire, which we find to be at least 4.6 nm.</abstract><doi>10.1103/PhysRevB.92.235420</doi></addata></record> |
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| subjects | Approximation Condensed matter Donors (electronic) Electron transport Mathematical models Transport Transportation models Wire |
| title | Electronic transport in Si:P [delta]-doped wires |
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