Intraband effects in excitonic second-harmonic generation

A theory for the nonlinear excitonic optical response of semiconductors is developed. By adopting the length gauge, intraband effects are rigorously taken into account. We show that the second-order nonlinear response mixing intra- and interband transitions can be expressed in terms of generalized d...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physical review. B 2015-12, Vol.92 (23), Article 235432
1. Verfasser: Pedersen, Thomas Garm
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 23
container_start_page
container_title Physical review. B
container_volume 92
creator Pedersen, Thomas Garm
description A theory for the nonlinear excitonic optical response of semiconductors is developed. By adopting the length gauge, intraband effects are rigorously taken into account. We show that the second-order nonlinear response mixing intra- and interband transitions can be expressed in terms of generalized derivatives of the exciton Green's function. The theory is applied to hexagonal boron-nitride monolayers. For both the linear and nonlinear response, a dramatic influence of excitons is found. Hence, new discrete resonances appear as well as pronounced changes in the continuum spectrum.
doi_str_mv 10.1103/PhysRevB.92.235432
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1855394794</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1855394794</sourcerecordid><originalsourceid>FETCH-LOGICAL-c346t-dd8f903be6747dcb72809be993d7e5388d2e8620c03f770414d79995119f09df3</originalsourceid><addsrcrecordid>eNo1kM1KAzEYRYMoWKsv4GqWbqbmd5JvqcWfQkERBXchk3yxI22mJlOxb2-1urr3wuEuDiHnjE4Yo-LycbEtT_h5PQE-4UJJwQ_IiClF6916Pdx1CqamjLNjclLKO6VMguQjArM0ZNe6FCqMEf1Qqi5V-OW7oU-drwr6PoV64fLqd79hwuyGrk-n5Ci6ZcGzvxyTl9ub5-l9PX-4m02v5rUXshnqEEwEKlpstNTBt5obCi0CiKBRCWMCR9Nw6qmIWlPJZNAAoBiDSCFEMSYX-9917j82WAa76orH5dIl7DfFMqOUAKlB7lC-R33uS8kY7Tp3K5e3llH748n-e7LA7d6T-AaCY1y7</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1855394794</pqid></control><display><type>article</type><title>Intraband effects in excitonic second-harmonic generation</title><source>American Physical Society Journals</source><creator>Pedersen, Thomas Garm</creator><creatorcontrib>Pedersen, Thomas Garm</creatorcontrib><description>A theory for the nonlinear excitonic optical response of semiconductors is developed. By adopting the length gauge, intraband effects are rigorously taken into account. We show that the second-order nonlinear response mixing intra- and interband transitions can be expressed in terms of generalized derivatives of the exciton Green's function. The theory is applied to hexagonal boron-nitride monolayers. For both the linear and nonlinear response, a dramatic influence of excitons is found. Hence, new discrete resonances appear as well as pronounced changes in the continuum spectrum.</description><identifier>ISSN: 1098-0121</identifier><identifier>ISSN: 2469-9950</identifier><identifier>EISSN: 1550-235X</identifier><identifier>EISSN: 2469-9969</identifier><identifier>DOI: 10.1103/PhysRevB.92.235432</identifier><language>eng</language><subject>Boron ; Condensed matter ; Continuums ; Derivatives ; Gages ; Monolayers ; Nonlinearity ; Semiconductors</subject><ispartof>Physical review. B, 2015-12, Vol.92 (23), Article 235432</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c346t-dd8f903be6747dcb72809be993d7e5388d2e8620c03f770414d79995119f09df3</citedby><cites>FETCH-LOGICAL-c346t-dd8f903be6747dcb72809be993d7e5388d2e8620c03f770414d79995119f09df3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,2863,2864,27901,27902</link.rule.ids></links><search><creatorcontrib>Pedersen, Thomas Garm</creatorcontrib><title>Intraband effects in excitonic second-harmonic generation</title><title>Physical review. B</title><description>A theory for the nonlinear excitonic optical response of semiconductors is developed. By adopting the length gauge, intraband effects are rigorously taken into account. We show that the second-order nonlinear response mixing intra- and interband transitions can be expressed in terms of generalized derivatives of the exciton Green's function. The theory is applied to hexagonal boron-nitride monolayers. For both the linear and nonlinear response, a dramatic influence of excitons is found. Hence, new discrete resonances appear as well as pronounced changes in the continuum spectrum.</description><subject>Boron</subject><subject>Condensed matter</subject><subject>Continuums</subject><subject>Derivatives</subject><subject>Gages</subject><subject>Monolayers</subject><subject>Nonlinearity</subject><subject>Semiconductors</subject><issn>1098-0121</issn><issn>2469-9950</issn><issn>1550-235X</issn><issn>2469-9969</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNo1kM1KAzEYRYMoWKsv4GqWbqbmd5JvqcWfQkERBXchk3yxI22mJlOxb2-1urr3wuEuDiHnjE4Yo-LycbEtT_h5PQE-4UJJwQ_IiClF6916Pdx1CqamjLNjclLKO6VMguQjArM0ZNe6FCqMEf1Qqi5V-OW7oU-drwr6PoV64fLqd79hwuyGrk-n5Ci6ZcGzvxyTl9ub5-l9PX-4m02v5rUXshnqEEwEKlpstNTBt5obCi0CiKBRCWMCR9Nw6qmIWlPJZNAAoBiDSCFEMSYX-9917j82WAa76orH5dIl7DfFMqOUAKlB7lC-R33uS8kY7Tp3K5e3llH748n-e7LA7d6T-AaCY1y7</recordid><startdate>20151217</startdate><enddate>20151217</enddate><creator>Pedersen, Thomas Garm</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20151217</creationdate><title>Intraband effects in excitonic second-harmonic generation</title><author>Pedersen, Thomas Garm</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c346t-dd8f903be6747dcb72809be993d7e5388d2e8620c03f770414d79995119f09df3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Boron</topic><topic>Condensed matter</topic><topic>Continuums</topic><topic>Derivatives</topic><topic>Gages</topic><topic>Monolayers</topic><topic>Nonlinearity</topic><topic>Semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pedersen, Thomas Garm</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physical review. B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pedersen, Thomas Garm</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Intraband effects in excitonic second-harmonic generation</atitle><jtitle>Physical review. B</jtitle><date>2015-12-17</date><risdate>2015</risdate><volume>92</volume><issue>23</issue><artnum>235432</artnum><issn>1098-0121</issn><issn>2469-9950</issn><eissn>1550-235X</eissn><eissn>2469-9969</eissn><abstract>A theory for the nonlinear excitonic optical response of semiconductors is developed. By adopting the length gauge, intraband effects are rigorously taken into account. We show that the second-order nonlinear response mixing intra- and interband transitions can be expressed in terms of generalized derivatives of the exciton Green's function. The theory is applied to hexagonal boron-nitride monolayers. For both the linear and nonlinear response, a dramatic influence of excitons is found. Hence, new discrete resonances appear as well as pronounced changes in the continuum spectrum.</abstract><doi>10.1103/PhysRevB.92.235432</doi></addata></record>
fulltext fulltext
identifier ISSN: 1098-0121
ispartof Physical review. B, 2015-12, Vol.92 (23), Article 235432
issn 1098-0121
2469-9950
1550-235X
2469-9969
language eng
recordid cdi_proquest_miscellaneous_1855394794
source American Physical Society Journals
subjects Boron
Condensed matter
Continuums
Derivatives
Gages
Monolayers
Nonlinearity
Semiconductors
title Intraband effects in excitonic second-harmonic generation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T03%3A40%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Intraband%20effects%20in%20excitonic%20second-harmonic%20generation&rft.jtitle=Physical%20review.%20B&rft.au=Pedersen,%20Thomas%20Garm&rft.date=2015-12-17&rft.volume=92&rft.issue=23&rft.artnum=235432&rft.issn=1098-0121&rft.eissn=1550-235X&rft_id=info:doi/10.1103/PhysRevB.92.235432&rft_dat=%3Cproquest_cross%3E1855394794%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1855394794&rft_id=info:pmid/&rfr_iscdi=true