On the Energy Gaps Induced by a Semiconducting Substrate in the Graphene Density of States

The analytical expressions for the densities of states for graphene formed on semiconducting substrates are obtained. The problem on the induced gap is studied thoroughly. It is shown, that graphene electronic spectrum according to the relation between the system’s parameters can contain two gaps or...

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Veröffentlicht in:	Modern applied science 2015-11, Vol.9 (12), p.234-234
Hauptverfasser:	Davydov, Sergey Yurevich, Lebedev, Alexander Alexandrovich
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Sprache:	eng
Schlagworte:	Coupling Density of states Electronics Energy gap Exact solutions Graphene Mathematical analysis Substrates
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container_title	Modern applied science
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creator	Davydov, Sergey Yurevich Lebedev, Alexander Alexandrovich
description	The analytical expressions for the densities of states for graphene formed on semiconducting substrates are obtained. The problem on the induced gap is studied thoroughly. It is shown, that graphene electronic spectrum according to the relation between the system’s parameters can contain two gaps or one gap, overlapping with the energy gap of substrate. The gaps width dependences on the coupling regimes (tight and weak) are obtained. Numerical estimations are fulfilled for the epitaxial graphene on 6H-SiC{0001}.
doi_str_mv	10.5539/mas.v9n12p234
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subjects	Coupling Density of states Electronics Energy gap Exact solutions Graphene Mathematical analysis Substrates
title	On the Energy Gaps Induced by a Semiconducting Substrate in the Graphene Density of States
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