Gate-Variable Mid-Infrared Optical Transitions in a (Bi1–x Sb x )2Te3 Topological Insulator

We report mid-infrared spectroscopy measurements of ultrathin, electrostatically gated (Bi1–x Sb x )2Te3 topological insulator films in which we observe several percent modulation of transmittance and reflectance as gating shifts the Fermi level. Infrared transmittance measurements of gated films we...

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Veröffentlicht in:	Nano letters 2017-01, Vol.17 (1), p.255-260
Hauptverfasser:	Whitney, William S, Brar, Victor W, Ou, Yunbo, Shao, Yinming, Davoyan, Artur R, Basov, D. N, He, Ke, Xue, Qi-Kun, Atwater, Harry A
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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