Structural and Electrical Characterization of SiO2 Gate Dielectrics Deposited from Solutions at Moderate Temperatures in Air

Silicon dioxide (SiO2) is the most widely used dielectric for electronic applications. It is usually produced by thermal oxidation of silicon or by using a wide range of vacuum-based techniques. By default, the growth of SiO2 by thermal oxidation of silicon requires the use of Si substrates whereas...

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Veröffentlicht in:	ACS applied materials & interfaces 2017-01, Vol.9 (1), p.529-536
Hauptverfasser:	Esro, Mazran, Kolosov, Oleg, Jones, Peter J, Milne, William I, Adamopoulos, George
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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