Electronic and magnetic properties in Mn-doped IIIA-nitride monolayers

Based on first‐principles calculations plus Hubbard U, we have studied the electronic structure and magnetic properties of Mn‐doped IIIA‐nitride monolayers. The substitution of Mn for Al or Ga atom induces a total magnetic moment of 4.00 µB per dopant, independent of the choice of functional. The do...

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Veröffentlicht in:	Physica Status Solidi. B: Basic Solid State Physics 2016-10, Vol.253 (10), p.2001-2008
Hauptverfasser:	Xiao, Wen-Zhi, Meng, Bo, Xu, Hai-Qing, Chen, Qiao, Wang, Ling-Ling
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum nitride computational physics density-functional theory electronic structure Electronics Gallium Gallium nitrides IIIA-nitrides Magnetic properties Magnetic semiconductors Monolayers Nanostructure
Online-Zugang:	Volltext
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