Fabrication and characteristics of porous germanium films
Porous germanium films with good adhesion to the substrate were produced by annealing GeO 2 ceramic films in H 2 atmosphere. The reduction of GeO 2 started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top...
Gespeichert in:
| Veröffentlicht in: | Science and technology of advanced materials 2009-12, Vol.10 (6), p.065001-065001 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 065001 |
|---|---|
| container_issue | 6 |
| container_start_page | 065001 |
| container_title | Science and technology of advanced materials |
| container_volume | 10 |
| creator | Jing, Chengbin Zhang, Chuanjian Zang, Xiaodan Zhou, Wenzheng Bai, Wei Lin, Tie Chu, Junhao |
| description | Porous germanium films with good adhesion to the substrate were produced by annealing GeO
2
ceramic films in H
2
atmosphere. The reduction of GeO
2
started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top layer and a higher degree of crystallinity at the bottom part of the Ge film; visible photoluminescence was detected from the small crystallites. Porous Ge films exhibit high density of holes (10
20
cm
−3
) and a maximum of Hall mobility at ∼225 K. Their p-type conductivity is dominated by the defect scattering mechanism. |
| doi_str_mv | 10.1088/1468-6996/10/6/065001 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_O3W</sourceid><recordid>TN_cdi_proquest_miscellaneous_1843915332</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_75d7e3e717cd4f76aeb52e18eda249a5</doaj_id><sourcerecordid>1843915332</sourcerecordid><originalsourceid>FETCH-LOGICAL-c612t-16eacc329249fc2437c79304ecb94287a1761293eef712b1ed6b2158e04537b53</originalsourceid><addsrcrecordid>eNqNkc1u1DAUhSMEoqXwCKAsWRDG1z-xvUGgqoVKldjA2nKc66mrJB7sTFHfHqeZVlSqECtb198558qnqt4C-QhEqQ3wVjWt1u0GyKbdkFYQAs-qY1BSNUIAf17u98xR9Srna0JIC5S_rI6oVFIygONKn9suBWfnEKfaTn3trmyybsYU8hxcrqOvdzHFfa63mEY7hf1Y-zCM-XX1wtsh45vDeVL9PD_7cfqtufz-9eL0y2XjStjcQIvWOUY15do7ypl0UjPC0XWaUyUtyMJphugl0A6wbzsKQiHhgslOsJPqYvXto702uxRGm25NtMHcDWLaGpvKqgMaKXqJDCVI13MvW4udoAgKe1vS7eL1afXa7bsRe4fTnOzwyPTxyxSuzDbeGEEk51wXg_cHgxR_7THPZgzZ4TDYCcsfGVCcaRCM0YKKFXUp5pzQP8QAMUuFZqnHLPUsk9asFRbdu793fFDdd1YAsgIh7v7b88MTkqdQs-t9wT8f8MnHUvrvmIbezPZ2iMknO7mQDft34h-ED8dR</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1843915332</pqid></control><display><type>article</type><title>Fabrication and characteristics of porous germanium films</title><source>Institute of Physics Open Access Journal Titles</source><creator>Jing, Chengbin ; Zhang, Chuanjian ; Zang, Xiaodan ; Zhou, Wenzheng ; Bai, Wei ; Lin, Tie ; Chu, Junhao</creator><creatorcontrib>Jing, Chengbin ; Zhang, Chuanjian ; Zang, Xiaodan ; Zhou, Wenzheng ; Bai, Wei ; Lin, Tie ; Chu, Junhao</creatorcontrib><description>Porous germanium films with good adhesion to the substrate were produced by annealing GeO
2
ceramic films in H
2
atmosphere. The reduction of GeO
2
started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top layer and a higher degree of crystallinity at the bottom part of the Ge film; visible photoluminescence was detected from the small crystallites. Porous Ge films exhibit high density of holes (10
20
cm
−3
) and a maximum of Hall mobility at ∼225 K. Their p-type conductivity is dominated by the defect scattering mechanism.</description><identifier>ISSN: 1468-6996</identifier><identifier>EISSN: 1878-5514</identifier><identifier>DOI: 10.1088/1468-6996/10/6/065001</identifier><identifier>PMID: 27877311</identifier><language>eng</language><publisher>United States: Taylor & Francis</publisher><subject>germanium ; porous structured film ; semiconducting behavior ; visible photoluminescence</subject><ispartof>Science and technology of advanced materials, 2009-12, Vol.10 (6), p.065001-065001</ispartof><rights>2009 National Institute for Materials Science 2009</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c612t-16eacc329249fc2437c79304ecb94287a1761293eef712b1ed6b2158e04537b53</citedby><cites>FETCH-LOGICAL-c612t-16eacc329249fc2437c79304ecb94287a1761293eef712b1ed6b2158e04537b53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1468-6996/10/6/065001/pdf$$EPDF$$P50$$Giop$$H</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC5074449/$$EHTML$$P50$$Gpubmedcentral$$H</linktohtml><link.rule.ids>230,314,727,780,784,864,885,1553,2102,27628,27924,27925,53791,53793,53904,53931</link.rule.ids><linktorsrc>$$Uhttp://iopscience.iop.org/1468-6996/10/6/065001$$EView_record_in_IOP_Publishing$$FView_record_in_$$GIOP_Publishing</linktorsrc><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/27877311$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Jing, Chengbin</creatorcontrib><creatorcontrib>Zhang, Chuanjian</creatorcontrib><creatorcontrib>Zang, Xiaodan</creatorcontrib><creatorcontrib>Zhou, Wenzheng</creatorcontrib><creatorcontrib>Bai, Wei</creatorcontrib><creatorcontrib>Lin, Tie</creatorcontrib><creatorcontrib>Chu, Junhao</creatorcontrib><title>Fabrication and characteristics of porous germanium films</title><title>Science and technology of advanced materials</title><addtitle>Sci Technol Adv Mater</addtitle><description>Porous germanium films with good adhesion to the substrate were produced by annealing GeO
2
ceramic films in H
2
atmosphere. The reduction of GeO
2
started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top layer and a higher degree of crystallinity at the bottom part of the Ge film; visible photoluminescence was detected from the small crystallites. Porous Ge films exhibit high density of holes (10
20
cm
−3
) and a maximum of Hall mobility at ∼225 K. Their p-type conductivity is dominated by the defect scattering mechanism.</description><subject>germanium</subject><subject>porous structured film</subject><subject>semiconducting behavior</subject><subject>visible photoluminescence</subject><issn>1468-6996</issn><issn>1878-5514</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNqNkc1u1DAUhSMEoqXwCKAsWRDG1z-xvUGgqoVKldjA2nKc66mrJB7sTFHfHqeZVlSqECtb198558qnqt4C-QhEqQ3wVjWt1u0GyKbdkFYQAs-qY1BSNUIAf17u98xR9Srna0JIC5S_rI6oVFIygONKn9suBWfnEKfaTn3trmyybsYU8hxcrqOvdzHFfa63mEY7hf1Y-zCM-XX1wtsh45vDeVL9PD_7cfqtufz-9eL0y2XjStjcQIvWOUY15do7ypl0UjPC0XWaUyUtyMJphugl0A6wbzsKQiHhgslOsJPqYvXto702uxRGm25NtMHcDWLaGpvKqgMaKXqJDCVI13MvW4udoAgKe1vS7eL1afXa7bsRe4fTnOzwyPTxyxSuzDbeGEEk51wXg_cHgxR_7THPZgzZ4TDYCcsfGVCcaRCM0YKKFXUp5pzQP8QAMUuFZqnHLPUsk9asFRbdu793fFDdd1YAsgIh7v7b88MTkqdQs-t9wT8f8MnHUvrvmIbezPZ2iMknO7mQDft34h-ED8dR</recordid><startdate>20091201</startdate><enddate>20091201</enddate><creator>Jing, Chengbin</creator><creator>Zhang, Chuanjian</creator><creator>Zang, Xiaodan</creator><creator>Zhou, Wenzheng</creator><creator>Bai, Wei</creator><creator>Lin, Tie</creator><creator>Chu, Junhao</creator><general>Taylor & Francis</general><general>IOP Publishing</general><general>Taylor & Francis Group</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>5PM</scope><scope>DOA</scope></search><sort><creationdate>20091201</creationdate><title>Fabrication and characteristics of porous germanium films</title><author>Jing, Chengbin ; Zhang, Chuanjian ; Zang, Xiaodan ; Zhou, Wenzheng ; Bai, Wei ; Lin, Tie ; Chu, Junhao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c612t-16eacc329249fc2437c79304ecb94287a1761293eef712b1ed6b2158e04537b53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>germanium</topic><topic>porous structured film</topic><topic>semiconducting behavior</topic><topic>visible photoluminescence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jing, Chengbin</creatorcontrib><creatorcontrib>Zhang, Chuanjian</creatorcontrib><creatorcontrib>Zang, Xiaodan</creatorcontrib><creatorcontrib>Zhou, Wenzheng</creatorcontrib><creatorcontrib>Bai, Wei</creatorcontrib><creatorcontrib>Lin, Tie</creatorcontrib><creatorcontrib>Chu, Junhao</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>Science and technology of advanced materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jing, Chengbin</au><au>Zhang, Chuanjian</au><au>Zang, Xiaodan</au><au>Zhou, Wenzheng</au><au>Bai, Wei</au><au>Lin, Tie</au><au>Chu, Junhao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication and characteristics of porous germanium films</atitle><jtitle>Science and technology of advanced materials</jtitle><addtitle>Sci Technol Adv Mater</addtitle><date>2009-12-01</date><risdate>2009</risdate><volume>10</volume><issue>6</issue><spage>065001</spage><epage>065001</epage><pages>065001-065001</pages><issn>1468-6996</issn><eissn>1878-5514</eissn><abstract>Porous germanium films with good adhesion to the substrate were produced by annealing GeO
2
ceramic films in H
2
atmosphere. The reduction of GeO
2
started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top layer and a higher degree of crystallinity at the bottom part of the Ge film; visible photoluminescence was detected from the small crystallites. Porous Ge films exhibit high density of holes (10
20
cm
−3
) and a maximum of Hall mobility at ∼225 K. Their p-type conductivity is dominated by the defect scattering mechanism.</abstract><cop>United States</cop><pub>Taylor & Francis</pub><pmid>27877311</pmid><doi>10.1088/1468-6996/10/6/065001</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1468-6996 |
| ispartof | Science and technology of advanced materials, 2009-12, Vol.10 (6), p.065001-065001 |
| issn | 1468-6996 1878-5514 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1843915332 |
| source | Institute of Physics Open Access Journal Titles |
| subjects | germanium porous structured film semiconducting behavior visible photoluminescence |
| title | Fabrication and characteristics of porous germanium films |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T08%3A19%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_O3W&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Fabrication%20and%20characteristics%20of%20porous%20germanium%20films&rft.jtitle=Science%20and%20technology%20of%20advanced%20materials&rft.au=Jing,%20Chengbin&rft.date=2009-12-01&rft.volume=10&rft.issue=6&rft.spage=065001&rft.epage=065001&rft.pages=065001-065001&rft.issn=1468-6996&rft.eissn=1878-5514&rft_id=info:doi/10.1088/1468-6996/10/6/065001&rft_dat=%3Cproquest_O3W%3E1843915332%3C/proquest_O3W%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1843915332&rft_id=info:pmid/27877311&rft_doaj_id=oai_doaj_org_article_75d7e3e717cd4f76aeb52e18eda249a5&rfr_iscdi=true |