Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO2 heterointerface probed by an in situ hard x-ray photoemission and soft x-ray absorption spectroscopies

In situ hard x-ray photoemission spectroscopy (HX-PES) and soft x-ray absorption spectroscopy (SX-XAS) have been employed to investigate a local redox reaction at the carbon/Gd-doped CeO 2 (GDC) thin film heterointerface under applied dc bias. In HX-PES, Ce3d and O1s core levels show a parallel chem...

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Veröffentlicht in:	Science and technology of advanced materials 2013-08, Vol.14 (4), p.045001-045001
Hauptverfasser:	Tsuchiya, Takashi, Miyoshi, Shogo, Yamashita, Yoshiyuki, Yoshikawa, Hideki, Terabe, Kazuya, Kobayashi, Keisuke, Yamaguchi, Shu
Format:	Artikel
Sprache:	eng
Schlagworte:	10.06 30.07 30.09 atom transistor atomic switch Carbon Cerium oxides Chemical equilibrium Chemical reduction Electrode polarization Electrodes Energy gap Gadolinium hard x-ray photoemission spectroscopy Ion currents Ion migration ionics Oxide coatings Photoelectric emission redox reaction ReRAM Room temperature Soft x rays Spectrum analysis Thin films Transport phenomena Vapor phases X ray absorption X-ray spectroscopy
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