Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO2 heterointerface probed by an in situ hard x-ray photoemission and soft x-ray absorption spectroscopies
In situ hard x-ray photoemission spectroscopy (HX-PES) and soft x-ray absorption spectroscopy (SX-XAS) have been employed to investigate a local redox reaction at the carbon/Gd-doped CeO 2 (GDC) thin film heterointerface under applied dc bias. In HX-PES, Ce3d and O1s core levels show a parallel chem...
Gespeichert in:
| Veröffentlicht in: | Science and technology of advanced materials 2013-08, Vol.14 (4), p.045001-045001 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 045001 |
|---|---|
| container_issue | 4 |
| container_start_page | 045001 |
| container_title | Science and technology of advanced materials |
| container_volume | 14 |
| creator | Tsuchiya, Takashi Miyoshi, Shogo Yamashita, Yoshiyuki Yoshikawa, Hideki Terabe, Kazuya Kobayashi, Keisuke Yamaguchi, Shu |
| description | In situ hard x-ray photoemission spectroscopy (HX-PES) and soft x-ray absorption spectroscopy (SX-XAS) have been employed to investigate a local redox reaction at the carbon/Gd-doped CeO
2
(GDC) thin film heterointerface under applied dc bias. In HX-PES, Ce3d and O1s core levels show a parallel chemical shift as large as 3.2 eV, corresponding to the redox window where ionic conductivity is predominant. The window width is equal to the energy gap between donor and acceptor levels of the GDC electrolyte. The Ce M-edge SX-XAS spectra also show a considerable increase of Ce
3+
satellite peak intensity, corresponding to electrochemical reduction by oxide ion migration. In addition to the reversible redox reaction, two distinct phenomena by the electrochemical transport of oxide ions are observed as an irreversible reduction of the entire oxide film by O
2
evolution from the GDC film to the gas phase, as well as a vigorous precipitation of oxygen gas at the bottom electrode to lift off the GDC film. These in situ spectroscopic observations describe well the electrochemical polarization behavior of a metal/GDC/metal capacitor-like two-electrode cell at room temperature. |
| doi_str_mv | 10.1088/1468-6996/14/4/045001 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_doaj_</sourceid><recordid>TN_cdi_proquest_miscellaneous_1843912591</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_17519aba49f74d60acffb43fbc6fe567</doaj_id><sourcerecordid>1843912591</sourcerecordid><originalsourceid>FETCH-LOGICAL-d436t-1776a0a142d6d1feb8312974f997c924d04a0401818be8272cdb1f7c5eff10a73</originalsourceid><addsrcrecordid>eNp9kt-K1DAUxoso7rr6CELAG2_qJG3atDeiDLouLCyIXofT_JnJ0ubUJLPOPJjvZzozIuuFNydfcr7zCxy-onjN6DtGu27FeNuVbd-3Wa34ivKGUvakuGSd6MqmYfxp1n88F8WLGO8ppS2r-PPiohKdEE3PL4tfXxEnksw0mwBpFwwJRuM-V1DJoSfDgeDeaUOWy-Q22bUoSERBGNCvrnWpcTaarM1dRbYmmYDO52pBGTIHHHIvU8AT50l0aUe2EDTZlwEOZN5iQjO5GI9Ur0lEm85NGCKG-fhfnI1KAaPC2Zn4snhmYYzm1fm8Kr5__vRt_aW8vbu-WX-8LTWv21QyIVqgwHilW82sGbqaVb3gtu-F6iuuKQfKKetYN5iuEpXSA7NCNcZaRkHUV8XNiasR7uUc3AThIBGcPD5g2EgIyanRSCYa1sMAvLeC65aCsnbgtR1Ua03TLqz3J9a8GyajlfEpwPgI-rjj3VZu8EE2tKd1RTPg7RkQ8MfOxCTz2pQZR_AGd1Gyjtc9q5qeZeubf6z3uAs-r0pWdWa12VVnFzu5HM5_DYzKJWByCY9cwpOV5PIUsDzz4TzjLYYJfmIYtUxwGDHYAF65KOv_I34DOGfagw</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2332062593</pqid></control><display><type>article</type><title>Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO2 heterointerface probed by an in situ hard x-ray photoemission and soft x-ray absorption spectroscopies</title><source>Taylor & Francis Open Access</source><source>DOAJ Directory of Open Access Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>Institute of Physics Open Access Journal Titles</source><source>Institute of Physics IOPscience extra</source><source>PubMed Central</source><source>Alma/SFX Local Collection</source><source>Free Full-Text Journals in Chemistry</source><creator>Tsuchiya, Takashi ; Miyoshi, Shogo ; Yamashita, Yoshiyuki ; Yoshikawa, Hideki ; Terabe, Kazuya ; Kobayashi, Keisuke ; Yamaguchi, Shu</creator><creatorcontrib>Tsuchiya, Takashi ; Miyoshi, Shogo ; Yamashita, Yoshiyuki ; Yoshikawa, Hideki ; Terabe, Kazuya ; Kobayashi, Keisuke ; Yamaguchi, Shu</creatorcontrib><description>In situ hard x-ray photoemission spectroscopy (HX-PES) and soft x-ray absorption spectroscopy (SX-XAS) have been employed to investigate a local redox reaction at the carbon/Gd-doped CeO
2
(GDC) thin film heterointerface under applied dc bias. In HX-PES, Ce3d and O1s core levels show a parallel chemical shift as large as 3.2 eV, corresponding to the redox window where ionic conductivity is predominant. The window width is equal to the energy gap between donor and acceptor levels of the GDC electrolyte. The Ce M-edge SX-XAS spectra also show a considerable increase of Ce
3+
satellite peak intensity, corresponding to electrochemical reduction by oxide ion migration. In addition to the reversible redox reaction, two distinct phenomena by the electrochemical transport of oxide ions are observed as an irreversible reduction of the entire oxide film by O
2
evolution from the GDC film to the gas phase, as well as a vigorous precipitation of oxygen gas at the bottom electrode to lift off the GDC film. These in situ spectroscopic observations describe well the electrochemical polarization behavior of a metal/GDC/metal capacitor-like two-electrode cell at room temperature.</description><identifier>ISSN: 1468-6996</identifier><identifier>EISSN: 1878-5514</identifier><identifier>DOI: 10.1088/1468-6996/14/4/045001</identifier><identifier>PMID: 27877594</identifier><identifier>CODEN: STAMCV</identifier><language>eng</language><publisher>Abingdon: Taylor & Francis</publisher><subject>10.06 ; 30.07 ; 30.09 ; atom transistor ; atomic switch ; Carbon ; Cerium oxides ; Chemical equilibrium ; Chemical reduction ; Electrode polarization ; Electrodes ; Energy gap ; Gadolinium ; hard x-ray photoemission spectroscopy ; Ion currents ; Ion migration ; ionics ; Oxide coatings ; Photoelectric emission ; redox reaction ; ReRAM ; Room temperature ; Soft x rays ; Spectrum analysis ; Thin films ; Transport phenomena ; Vapor phases ; X ray absorption ; X-ray spectroscopy</subject><ispartof>Science and technology of advanced materials, 2013-08, Vol.14 (4), p.045001-045001</ispartof><rights>2013 National Institute for Materials Science 2013</rights><rights>2013 National Institute for Materials Science</rights><rights>2013 National Institute for Materials Science. This work is licensed under the Creative Commons Attribution – Non-Commercial – Share Alike License http://creativecommons.org/licenses/by-nc-sa/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1468-6996/14/4/045001/pdf$$EPDF$$P50$$Giop$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC5090320/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,864,885,2102,27502,27924,27925,38868,38890,53791,53793,53840,53867,59143,59144</link.rule.ids></links><search><creatorcontrib>Tsuchiya, Takashi</creatorcontrib><creatorcontrib>Miyoshi, Shogo</creatorcontrib><creatorcontrib>Yamashita, Yoshiyuki</creatorcontrib><creatorcontrib>Yoshikawa, Hideki</creatorcontrib><creatorcontrib>Terabe, Kazuya</creatorcontrib><creatorcontrib>Kobayashi, Keisuke</creatorcontrib><creatorcontrib>Yamaguchi, Shu</creatorcontrib><title>Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO2 heterointerface probed by an in situ hard x-ray photoemission and soft x-ray absorption spectroscopies</title><title>Science and technology of advanced materials</title><addtitle>STAM</addtitle><addtitle>Sci. Technol. Adv. Mater</addtitle><description>In situ hard x-ray photoemission spectroscopy (HX-PES) and soft x-ray absorption spectroscopy (SX-XAS) have been employed to investigate a local redox reaction at the carbon/Gd-doped CeO
2
(GDC) thin film heterointerface under applied dc bias. In HX-PES, Ce3d and O1s core levels show a parallel chemical shift as large as 3.2 eV, corresponding to the redox window where ionic conductivity is predominant. The window width is equal to the energy gap between donor and acceptor levels of the GDC electrolyte. The Ce M-edge SX-XAS spectra also show a considerable increase of Ce
3+
satellite peak intensity, corresponding to electrochemical reduction by oxide ion migration. In addition to the reversible redox reaction, two distinct phenomena by the electrochemical transport of oxide ions are observed as an irreversible reduction of the entire oxide film by O
2
evolution from the GDC film to the gas phase, as well as a vigorous precipitation of oxygen gas at the bottom electrode to lift off the GDC film. These in situ spectroscopic observations describe well the electrochemical polarization behavior of a metal/GDC/metal capacitor-like two-electrode cell at room temperature.</description><subject>10.06</subject><subject>30.07</subject><subject>30.09</subject><subject>atom transistor</subject><subject>atomic switch</subject><subject>Carbon</subject><subject>Cerium oxides</subject><subject>Chemical equilibrium</subject><subject>Chemical reduction</subject><subject>Electrode polarization</subject><subject>Electrodes</subject><subject>Energy gap</subject><subject>Gadolinium</subject><subject>hard x-ray photoemission spectroscopy</subject><subject>Ion currents</subject><subject>Ion migration</subject><subject>ionics</subject><subject>Oxide coatings</subject><subject>Photoelectric emission</subject><subject>redox reaction</subject><subject>ReRAM</subject><subject>Room temperature</subject><subject>Soft x rays</subject><subject>Spectrum analysis</subject><subject>Thin films</subject><subject>Transport phenomena</subject><subject>Vapor phases</subject><subject>X ray absorption</subject><subject>X-ray spectroscopy</subject><issn>1468-6996</issn><issn>1878-5514</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>0YH</sourceid><sourceid>O3W</sourceid><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><sourceid>DOA</sourceid><recordid>eNp9kt-K1DAUxoso7rr6CELAG2_qJG3atDeiDLouLCyIXofT_JnJ0ubUJLPOPJjvZzozIuuFNydfcr7zCxy-onjN6DtGu27FeNuVbd-3Wa34ivKGUvakuGSd6MqmYfxp1n88F8WLGO8ppS2r-PPiohKdEE3PL4tfXxEnksw0mwBpFwwJRuM-V1DJoSfDgeDeaUOWy-Q22bUoSERBGNCvrnWpcTaarM1dRbYmmYDO52pBGTIHHHIvU8AT50l0aUe2EDTZlwEOZN5iQjO5GI9Ur0lEm85NGCKG-fhfnI1KAaPC2Zn4snhmYYzm1fm8Kr5__vRt_aW8vbu-WX-8LTWv21QyIVqgwHilW82sGbqaVb3gtu-F6iuuKQfKKetYN5iuEpXSA7NCNcZaRkHUV8XNiasR7uUc3AThIBGcPD5g2EgIyanRSCYa1sMAvLeC65aCsnbgtR1Ua03TLqz3J9a8GyajlfEpwPgI-rjj3VZu8EE2tKd1RTPg7RkQ8MfOxCTz2pQZR_AGd1Gyjtc9q5qeZeubf6z3uAs-r0pWdWa12VVnFzu5HM5_DYzKJWByCY9cwpOV5PIUsDzz4TzjLYYJfmIYtUxwGDHYAF65KOv_I34DOGfagw</recordid><startdate>20130801</startdate><enddate>20130801</enddate><creator>Tsuchiya, Takashi</creator><creator>Miyoshi, Shogo</creator><creator>Yamashita, Yoshiyuki</creator><creator>Yoshikawa, Hideki</creator><creator>Terabe, Kazuya</creator><creator>Kobayashi, Keisuke</creator><creator>Yamaguchi, Shu</creator><general>Taylor & Francis</general><general>IOP Publishing</general><general>Taylor & Francis Ltd</general><general>Taylor & Francis Group</general><scope>0YH</scope><scope>O3W</scope><scope>TSCCA</scope><scope>3V.</scope><scope>7U5</scope><scope>7XB</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FK</scope><scope>8G5</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>JG9</scope><scope>L7M</scope><scope>M2O</scope><scope>MBDVC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>Q9U</scope><scope>7X8</scope><scope>5PM</scope><scope>DOA</scope></search><sort><creationdate>20130801</creationdate><title>Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO2 heterointerface probed by an in situ hard x-ray photoemission and soft x-ray absorption spectroscopies</title><author>Tsuchiya, Takashi ; Miyoshi, Shogo ; Yamashita, Yoshiyuki ; Yoshikawa, Hideki ; Terabe, Kazuya ; Kobayashi, Keisuke ; Yamaguchi, Shu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-d436t-1776a0a142d6d1feb8312974f997c924d04a0401818be8272cdb1f7c5eff10a73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>10.06</topic><topic>30.07</topic><topic>30.09</topic><topic>atom transistor</topic><topic>atomic switch</topic><topic>Carbon</topic><topic>Cerium oxides</topic><topic>Chemical equilibrium</topic><topic>Chemical reduction</topic><topic>Electrode polarization</topic><topic>Electrodes</topic><topic>Energy gap</topic><topic>Gadolinium</topic><topic>hard x-ray photoemission spectroscopy</topic><topic>Ion currents</topic><topic>Ion migration</topic><topic>ionics</topic><topic>Oxide coatings</topic><topic>Photoelectric emission</topic><topic>redox reaction</topic><topic>ReRAM</topic><topic>Room temperature</topic><topic>Soft x rays</topic><topic>Spectrum analysis</topic><topic>Thin films</topic><topic>Transport phenomena</topic><topic>Vapor phases</topic><topic>X ray absorption</topic><topic>X-ray spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsuchiya, Takashi</creatorcontrib><creatorcontrib>Miyoshi, Shogo</creatorcontrib><creatorcontrib>Yamashita, Yoshiyuki</creatorcontrib><creatorcontrib>Yoshikawa, Hideki</creatorcontrib><creatorcontrib>Terabe, Kazuya</creatorcontrib><creatorcontrib>Kobayashi, Keisuke</creatorcontrib><creatorcontrib>Yamaguchi, Shu</creatorcontrib><collection>Taylor & Francis Open Access</collection><collection>Institute of Physics Open Access Journal Titles</collection><collection>IOPscience (Open Access)</collection><collection>ProQuest Central (Corporate)</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Research Library</collection><collection>Research Library (Corporate)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>ProQuest Central Basic</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>Science and technology of advanced materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tsuchiya, Takashi</au><au>Miyoshi, Shogo</au><au>Yamashita, Yoshiyuki</au><au>Yoshikawa, Hideki</au><au>Terabe, Kazuya</au><au>Kobayashi, Keisuke</au><au>Yamaguchi, Shu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO2 heterointerface probed by an in situ hard x-ray photoemission and soft x-ray absorption spectroscopies</atitle><jtitle>Science and technology of advanced materials</jtitle><stitle>STAM</stitle><addtitle>Sci. Technol. Adv. Mater</addtitle><date>2013-08-01</date><risdate>2013</risdate><volume>14</volume><issue>4</issue><spage>045001</spage><epage>045001</epage><pages>045001-045001</pages><issn>1468-6996</issn><eissn>1878-5514</eissn><coden>STAMCV</coden><abstract>In situ hard x-ray photoemission spectroscopy (HX-PES) and soft x-ray absorption spectroscopy (SX-XAS) have been employed to investigate a local redox reaction at the carbon/Gd-doped CeO
2
(GDC) thin film heterointerface under applied dc bias. In HX-PES, Ce3d and O1s core levels show a parallel chemical shift as large as 3.2 eV, corresponding to the redox window where ionic conductivity is predominant. The window width is equal to the energy gap between donor and acceptor levels of the GDC electrolyte. The Ce M-edge SX-XAS spectra also show a considerable increase of Ce
3+
satellite peak intensity, corresponding to electrochemical reduction by oxide ion migration. In addition to the reversible redox reaction, two distinct phenomena by the electrochemical transport of oxide ions are observed as an irreversible reduction of the entire oxide film by O
2
evolution from the GDC film to the gas phase, as well as a vigorous precipitation of oxygen gas at the bottom electrode to lift off the GDC film. These in situ spectroscopic observations describe well the electrochemical polarization behavior of a metal/GDC/metal capacitor-like two-electrode cell at room temperature.</abstract><cop>Abingdon</cop><pub>Taylor & Francis</pub><pmid>27877594</pmid><doi>10.1088/1468-6996/14/4/045001</doi><tpages>12</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1468-6996 |
| ispartof | Science and technology of advanced materials, 2013-08, Vol.14 (4), p.045001-045001 |
| issn | 1468-6996 1878-5514 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1843912591 |
| source | Taylor & Francis Open Access; DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Institute of Physics Open Access Journal Titles; Institute of Physics IOPscience extra; PubMed Central; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry |
| subjects | 10.06 30.07 30.09 atom transistor atomic switch Carbon Cerium oxides Chemical equilibrium Chemical reduction Electrode polarization Electrodes Energy gap Gadolinium hard x-ray photoemission spectroscopy Ion currents Ion migration ionics Oxide coatings Photoelectric emission redox reaction ReRAM Room temperature Soft x rays Spectrum analysis Thin films Transport phenomena Vapor phases X ray absorption X-ray spectroscopy |
| title | Room temperature redox reaction by oxide ion migration at carbon/Gd-doped CeO2 heterointerface probed by an in situ hard x-ray photoemission and soft x-ray absorption spectroscopies |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T03%3A12%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_doaj_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Room%20temperature%20redox%20reaction%20by%20oxide%20ion%20migration%20at%20carbon/Gd-doped%20CeO2%20heterointerface%20probed%20by%20an%20in%20situ%20hard%20x-ray%20photoemission%20and%20soft%20x-ray%20absorption%20spectroscopies&rft.jtitle=Science%20and%20technology%20of%20advanced%20materials&rft.au=Tsuchiya,%20Takashi&rft.date=2013-08-01&rft.volume=14&rft.issue=4&rft.spage=045001&rft.epage=045001&rft.pages=045001-045001&rft.issn=1468-6996&rft.eissn=1878-5514&rft.coden=STAMCV&rft_id=info:doi/10.1088/1468-6996/14/4/045001&rft_dat=%3Cproquest_doaj_%3E1843912591%3C/proquest_doaj_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2332062593&rft_id=info:pmid/27877594&rft_doaj_id=oai_doaj_org_article_17519aba49f74d60acffb43fbc6fe567&rfr_iscdi=true |