7 nm/V DC tunability and millivolt scale switching in silicon carrier injection degenerate band edge resonators

7 nm/V DC tunability and millivolt scale switching in silicon carrier injection degenerate band edge resonators

We demonstrate electro-optical tuning of degenerate band edge resonances in Si photonic waveguides for applications including tunable filters, low voltage switches, and modulators. Carrier injection modulation is enabled by introducing periodic Si slabs to electrically connect the resonator to P and...

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Veröffentlicht in:Optics express 2016-10, Vol.24 (20), p.23481-23493
Hauptverfasser: Wood, Michael G, Burr, Justin R, Reano, Ronald M
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Burr, Justin R
Reano, Ronald M
description We demonstrate electro-optical tuning of degenerate band edge resonances in Si photonic waveguides for applications including tunable filters, low voltage switches, and modulators. Carrier injection modulation is enabled by introducing periodic Si slabs to electrically connect the resonator to P and N dopants. Measured devices yield a large DC tunability of 7.1 nm/V and a peak switching slope of 206 dB/V. Digital data transmission measurements at 100 Mb/s show 3 dB of switching with a swing voltage of 6.8 mV, 91.4 aJ/bit switching energy, and 1.08 pJ/bit holding energy.
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1839114616</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1839114616</sourcerecordid><originalsourceid>FETCH-LOGICAL-c329t-ba0c807ffa30993155c1fe04a4af21437ce3664c00e26892af39888c2cdac6d03</originalsourceid><addsrcrecordid>eNpNkDtPwzAURi0EoqWwMSOPDLT1q4kzolIeUqUuwGo5zk1xldjFdkD996RqQUz36tPRGQ5C15RMKM_EdLWYMDEhjAtJT9CQkkKMBZH56b9_gC5i3BBCRV7k52jAcsmkoHSIfI5dO33HD3OcOqdL29i0w9pVuLVNY798k3A0ugEcv20yH9atsXU49pzxDhsdgoXQTxswyfZLBWtwEHQCXO41UK0BB4je6eRDvERntW4iXB3vCL09Ll7nz-Pl6ullfr8cG86KNC41MZLkda05KQpOZzNDayBCC10zKnhugGeZMIQAy2TBdM0LKaVhptImqwgfoduDdxv8ZwcxqdZGA02jHfguKip5QanIaNajdwfUBB9jgFptg2112ClK1D6xWi0UE-qQuMdvjuaubKH6g3-b8h8wjXcx</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1839114616</pqid></control><display><type>article</type><title>7 nm/V DC tunability and millivolt scale switching in silicon carrier injection degenerate band edge resonators</title><source>DOAJ Directory of Open Access Journals</source><source>EZB-FREE-00999 freely available EZB journals</source><source>Alma/SFX Local Collection</source><creator>Wood, Michael G ; Burr, Justin R ; Reano, Ronald M</creator><creatorcontrib>Wood, Michael G ; Burr, Justin R ; Reano, Ronald M</creatorcontrib><description>We demonstrate electro-optical tuning of degenerate band edge resonances in Si photonic waveguides for applications including tunable filters, low voltage switches, and modulators. Carrier injection modulation is enabled by introducing periodic Si slabs to electrically connect the resonator to P and N dopants. Measured devices yield a large DC tunability of 7.1 nm/V and a peak switching slope of 206 dB/V. Digital data transmission measurements at 100 Mb/s show 3 dB of switching with a swing voltage of 6.8 mV, 91.4 aJ/bit switching energy, and 1.08 pJ/bit holding energy.</description><identifier>ISSN: 1094-4087</identifier><identifier>EISSN: 1094-4087</identifier><identifier>DOI: 10.1364/OE.24.023481</identifier><identifier>PMID: 27828411</identifier><language>eng</language><publisher>United States</publisher><ispartof>Optics express, 2016-10, Vol.24 (20), p.23481-23493</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c329t-ba0c807ffa30993155c1fe04a4af21437ce3664c00e26892af39888c2cdac6d03</citedby><cites>FETCH-LOGICAL-c329t-ba0c807ffa30993155c1fe04a4af21437ce3664c00e26892af39888c2cdac6d03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,864,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/27828411$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Wood, Michael G</creatorcontrib><creatorcontrib>Burr, Justin R</creatorcontrib><creatorcontrib>Reano, Ronald M</creatorcontrib><title>7 nm/V DC tunability and millivolt scale switching in silicon carrier injection degenerate band edge resonators</title><title>Optics express</title><addtitle>Opt Express</addtitle><description>We demonstrate electro-optical tuning of degenerate band edge resonances in Si photonic waveguides for applications including tunable filters, low voltage switches, and modulators. Carrier injection modulation is enabled by introducing periodic Si slabs to electrically connect the resonator to P and N dopants. Measured devices yield a large DC tunability of 7.1 nm/V and a peak switching slope of 206 dB/V. Digital data transmission measurements at 100 Mb/s show 3 dB of switching with a swing voltage of 6.8 mV, 91.4 aJ/bit switching energy, and 1.08 pJ/bit holding energy.</description><issn>1094-4087</issn><issn>1094-4087</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNpNkDtPwzAURi0EoqWwMSOPDLT1q4kzolIeUqUuwGo5zk1xldjFdkD996RqQUz36tPRGQ5C15RMKM_EdLWYMDEhjAtJT9CQkkKMBZH56b9_gC5i3BBCRV7k52jAcsmkoHSIfI5dO33HD3OcOqdL29i0w9pVuLVNY798k3A0ugEcv20yH9atsXU49pzxDhsdgoXQTxswyfZLBWtwEHQCXO41UK0BB4je6eRDvERntW4iXB3vCL09Ll7nz-Pl6ullfr8cG86KNC41MZLkda05KQpOZzNDayBCC10zKnhugGeZMIQAy2TBdM0LKaVhptImqwgfoduDdxv8ZwcxqdZGA02jHfguKip5QanIaNajdwfUBB9jgFptg2112ClK1D6xWi0UE-qQuMdvjuaubKH6g3-b8h8wjXcx</recordid><startdate>20161003</startdate><enddate>20161003</enddate><creator>Wood, Michael G</creator><creator>Burr, Justin R</creator><creator>Reano, Ronald M</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20161003</creationdate><title>7 nm/V DC tunability and millivolt scale switching in silicon carrier injection degenerate band edge resonators</title><author>Wood, Michael G ; Burr, Justin R ; Reano, Ronald M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c329t-ba0c807ffa30993155c1fe04a4af21437ce3664c00e26892af39888c2cdac6d03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wood, Michael G</creatorcontrib><creatorcontrib>Burr, Justin R</creatorcontrib><creatorcontrib>Reano, Ronald M</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Optics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wood, Michael G</au><au>Burr, Justin R</au><au>Reano, Ronald M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>7 nm/V DC tunability and millivolt scale switching in silicon carrier injection degenerate band edge resonators</atitle><jtitle>Optics express</jtitle><addtitle>Opt Express</addtitle><date>2016-10-03</date><risdate>2016</risdate><volume>24</volume><issue>20</issue><spage>23481</spage><epage>23493</epage><pages>23481-23493</pages><issn>1094-4087</issn><eissn>1094-4087</eissn><abstract>We demonstrate electro-optical tuning of degenerate band edge resonances in Si photonic waveguides for applications including tunable filters, low voltage switches, and modulators. Carrier injection modulation is enabled by introducing periodic Si slabs to electrically connect the resonator to P and N dopants. Measured devices yield a large DC tunability of 7.1 nm/V and a peak switching slope of 206 dB/V. Digital data transmission measurements at 100 Mb/s show 3 dB of switching with a swing voltage of 6.8 mV, 91.4 aJ/bit switching energy, and 1.08 pJ/bit holding energy.</abstract><cop>United States</cop><pmid>27828411</pmid><doi>10.1364/OE.24.023481</doi><tpages>13</tpages><oa>free_for_read</oa></addata></record>
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title 7 nm/V DC tunability and millivolt scale switching in silicon carrier injection degenerate band edge resonators
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T19%3A14%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=7%20nm/V%20DC%20tunability%20and%20millivolt%20scale%20switching%20in%20silicon%20carrier%20injection%20degenerate%20band%20edge%20resonators&rft.jtitle=Optics%20express&rft.au=Wood,%20Michael%20G&rft.date=2016-10-03&rft.volume=24&rft.issue=20&rft.spage=23481&rft.epage=23493&rft.pages=23481-23493&rft.issn=1094-4087&rft.eissn=1094-4087&rft_id=info:doi/10.1364/OE.24.023481&rft_dat=%3Cproquest_cross%3E1839114616%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1839114616&rft_id=info:pmid/27828411&rfr_iscdi=true