A Typical MOSFET Modeling Procedure for RF Analog Circuit Design

This paper presents a theoretical yet practical device targeting method to extract typical model parameters of MOSFET devices on wafer for RF analog integrated circuit design. This method employs skewing algorithms with model parameters of existing typical device which are selected by using inter-lot process electrical test parameters. Although this technique can be applied for both n-channel and p-channel MOSFETs, only n-channel devices could be prepared for our experiments in this research. To demonstrate the plausibility of this method, a cascode amplifier is designed to simulate frequency characteristic of S21 with this method.